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Displaying 51676 - 51700 of 74256

Accuracy Differences Among Photomask Metrology Tools and Why They Matter

December 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimensions (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have different cost, throughput

Characteristics of Partial Discharges on a Dielectric Surface in SF 6 -N 2 Mixtures

December 1, 1998
Author(s)
X. Han, Yicheng Wang, Loucas G. Christophorou, Richard J. Van Brunt
An important tool for improving the reliability of HV-insulation systems relies on partial discharge (PD) measurements. The assessment of the insulation failure of HV equipment using PD measurements requires an interpretation of the PD measurements

Characterization and Applications of On-Wafer Diode Noise Sources

December 1, 1998
Author(s)
Lawrence P. Dunleavy, James P. Randa, Dave K. Walker, Robert L. Billinger, John Rice
A set of wafer-probeable diode noise source transfer standards are characterized using on-wafer noise-temperature methods developed at the National Institute of Standards and Technology (NIST), Boulder, CO.

Chemical Limits to Flame Inhibition

December 1, 1998
Author(s)
Valeri I. Babushok, Wing Tsang, Gregory T. Linteris, D Reinelt
This paper deals with the ultimate limits of chemical contributions to flame inhibition. Particular attention is focussed on the inhibition cycles which regenerate the inhibitor. This leads to the definition of an idealized "perfect" inhibition cycle. It

Consistency of Calculated and Measured Electron Inelastic Mean Free Paths

December 1, 1998
Author(s)
Cedric J. Powell, Aleksander Jablonski
We present an evaluation of the consistency of calculated and measured electron inelastic mean free paths (IMFPs) for seven elemental solids (Al, Si, Ni, Cu, Ge, Ag, and Au). These solids were selected because, for each, there were two or more independent
Displaying 51676 - 51700 of 74256
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