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Displaying 33351 - 33375 of 74026

Helium Ion Microscopy: A New Technique for Semiconductor Metrology and Nanotechnology

January 1, 2007
Author(s)
Michael T. Postek, Andras Vladar, John A. Kramar, L A. Stern, John Notte, Sean McVey
The Helium Ion Microscope (HIM) offers a new, potentially disruptive technique for nano-metrology. This methodology presents an approach to measurements for nanotechnology and nano-manufacturing which has several potential advantages over the traditional

Higher Order Tip Effects in CD-AFM Linewidth Measurements

January 1, 2007
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson
In critical dimension Atomic force microscopy (CD-AFM), a source of uncertainty is the tip. Measurements made using a CD-AFM tip show an apparent broadening of the width. Usually the results can be approximated if the tip-width is known. In addition to tip

Images of Strips On and Trenches In Substrates

January 1, 2007
Author(s)
Egon Marx
The computation of images of lines or strips on a substrate and trenches in a substrate or a layer above a substrate, all made of dielectric or absorbing materials, using integral equations equivalent to Maxwell's equations and using Fourier optics are
Displaying 33351 - 33375 of 74026
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