Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 30851 - 30875 of 73697

ECS Transactions

May 18, 2008
Author(s)
Yaw S. Obeng, Stephen Knight, Joaquin (. Martinez
Nanoelectronics require the introduction of several new uncharacterized material(s) combinations and new processing techniques. The critical metrology and characterization needs of the nanoelectronics industry are being addressed with a broad range of

Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films

May 16, 2008
Author(s)
Peter K. Schenck, Jennifer L. Klamo, Nabil Bassim, Peter G. Burke, Yvonne B. Gerbig, Martin L. Green
HfO2-TiO2-Y2O3 is an interesting high-k dielectric system. Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties. A library film of this system deposited at

A Passive Heterodyne HEB Imager Operating at 850 GHz

May 15, 2008
Author(s)
Eyal Gerecht, Dazhen Gu, Lixing You, Sigfrid Yngvessen
We report the development and characterization of a passive heterodyne hot electron bolometer (HEB) imager operating at 850 GHz. HEB detectors provide unprecedented sensitivity and spectral resolution at terahertz frequencies covering the frequency range

Finite element analysis of a crack tip in silicate glass: No evidence for a plastic zone

May 15, 2008
Author(s)
Theo Fett, G Rizzi, D Creek, Susanne Wagner, J.P. Guinn, JM Lopez-Cepero, Sheldon M. Wiederhorn
Recently, the claim was made that cracks in silicate glasses propagate by the nucleation, growth, and coalescence of cavities at crack tips, which is the same way as in metals but at a much smaller scale. This hypothesis for crack growth is based in part

ISCD-NIST DXA Survey: Preliminary Report

May 15, 2008
Author(s)
Andrew M. Dienstfrey, Tammy L. Oreskovic, Lawrence T. Hudson, Herbert S. Bennett
This article reports and discusses briefly the preliminary results from the recent International Society for Clinical Densitometry (ISCD)-National Institute of Standards and Technology (NIST) dual-energy x-ray absorptiometry (DXA) Survey. The 1074 Survey

Peer Review Report: PHMSA Programs

May 14, 2008
Author(s)
Thomas A. Siewert, Michael Else, Richard J. Fields, Joe C. Bowles, L. J. Moore, Philip D. Flenner, Mario Macia, Jerry Rau, Steven E. Powell
The Pipeline and Hazardous Materials Safety Administration s (PHMSA) Pipeline Safety Research and Development (R&D) Program held its first structured peer review of active research projects in February 2006 and the most recent peer review on May 2008. The

Peer review report: Pipeline and hazardous materials safety administration, pipeline safety research and development program

May 14, 2008
Author(s)
Richard J. Fields, Louis E. Hayden, Thomas J. O'Grady, Joseph D. McColskey, Joe C. Bowles, T. R. Webb, Christopher N. McCowan, Dennis W. Hinnah, Ronald W. Haupt, Thomas A. Siewert
The purpose of this document is to report findings from the research peer reviews held March 27-29, 2007 for PHMSA's Pipeline Safety Research and Development Program. The findings and recommendations in this report derive from the scoring and comments

The Impact of the Dielectric / Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors

May 14, 2008
Author(s)
Youngsuk Jung, Regis J. Kline, Eric K. Lin, Daniel A. Fischer, Michael F. Toney, Martin Heeney, Iain McCulloch, Dean DeLongchamp
The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics

Aminoxyl (nitroxyl)Radicals in the Decomposition of RDX

May 13, 2008
Author(s)
Karl K. Irikura
The explosive RDX (1,3,5-trinitrohexahydro-s-triazine) is thought to decompose by homolytic N-N bond cleavage, among other possible initiation reactions. Quantum chemistry calculations show that the resulting aminyl radical can abstract an oxygen atom from

Relating Taxonomies with Regulations

May 13, 2008
Author(s)
Chin P. Cheng, Jiayi Pan, Gloria T. Lau, Kincho H. Law, Albert T. Jones
Increasingly, taxonomies are being developed for a wide variety of industrial domains and specific applications within those domains. These taxonomies attempt to represent formally the vocabularies commonly used by domain practitioners. These formal

Electric field control of the magnetic state in Bi Fe O3 single crystals

May 12, 2008
Author(s)
Seoungsu Lee, William D. Ratcliff, S.-W. Cheong, V. Kiryukhin
Single crystals of multiferroic BiFeO 3 were investigated using neutron scattering. Application of an electric field reversibly switches ferroelastic domains, inducing changes in the magnetic structure which follows rotation of the structural domains. In

How the User can Improve Fingerprint Image Quality

May 12, 2008
Author(s)
Mary F. Theofanos, Ross J. Micheals, Shahram Orandi, Brian C. Stanton, Nien F. Zhang
Traditionally the biometric field has viewed the user as a passive source of the biometric sample rather than an interactive component of the biometric system. But fingerprint image quality is highly dependent on the human computer interaction and

Reference 0 /45 Colorimeter

May 12, 2008
Author(s)
Maria E. Nadal
The Optical Technology Division at the National Institute of Standards and Technology (NIST) has developed a new instrument designed to measure the surface color of reflective, non-fluorescent samples at a geometry of 0 illumination angle and 45 viewing

Sensor Network based on IEEE 1451.0 and IEEE p1451.2-RS232

May 12, 2008
Author(s)
Yuyin Song, Kang B. Lee
The Institute of Electrical and Electronics Engineers (IEEE) 1451 family of standards defines a set of common communication interfaces for connecting smart transducers (sensors or actuators) to microprocessor-based systems, instruments, and networks in a

Subspace Approximation of Face Recognition Algorithms: An Empirical Study

May 12, 2008
Author(s)
P J. Phillips, Pranab Mohanty, Sudeep Sarkar, Rangachar Kasturi
We present a theory for constructing linear subspace approximations to face recognition algorithms and empirically demonstrate that a surprisingly diverse set of face recognition approaches can be approximated well using a linear model. A linear model

Design Secure and Application-Oriented VANET

May 11, 2008
Author(s)
Yi Qian, Nader Moayeri
Vehicular ad hoc network (VANET) is recognized as an important component of Intelligent Transportation Systems. The main benefit of VANET communication is seen in active safety systems, which target to increase safety of passengers by exchanging warning

Impact of Signaling Load on the UMTS Call Blocking/Dropping

May 11, 2008
Author(s)
Yi Qian, David Tipper, Saowaphak Sasanus
Radio resources in the third generation (3G) wireless cellular networks (WCNs) such as the universal mobile telecommunications system (UMTS) network is limited in term of soft capacity. The quality of a signaling service transmission depends on various
Displaying 30851 - 30875 of 73697
Was this page helpful?