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Displaying 2626 - 2650 of 2755

Working and Check Standards for NIST Surface and Microform Measurements

January 1, 1995
Author(s)
Jun-Feng Song, Theodore V. Vorburger
Different working standards and check standards are used in the NIST surface and microform measurement laboratory for calibrating instruments, establishing measurement traceability and control measurement uncertainty. The basic requirements for these

Accuracy in Integrated Circuit Dimensional Measurements

December 1, 1994
Author(s)
James E. Potzick
The measurement of critical dimensions of features on integrated circuits and photomasks is modeled as the comparison of the images of the test object and of a standard object in a measuring device. A length measuring instrument is then a comparator. The

Parameters Characterizing a Critical Dimension Measurement

December 1, 1994
Author(s)
Robert D. Larrabee, Michael T. Postek
There are a number of parameters used to characterize a measurement result for the purposes of specifying its value for the intended purpose. Precision (variability) and accuracy (correctness) are two of the more often used parameters and, like many other

Dynamics and Structure of Self-Assembled Organic Molecules at the Solid-Liquid Interface

October 1, 1994
Author(s)
J Jorgensen, N Shcmeisser, J Garnaes, L Madsen, K Schaumburg, Larry Hansen
We have analysed scanning tunnelling microscopc (STM) images of self-assembled didodecylbenzene (DDB) molecules physisorbed on graphite from a DDB solution using octylbenzene as solvent. The DDB images were obtained alternating with images of the graphite

Design of an Atomic Force Microscope with Interferometric Position Control

August 19, 1994
Author(s)
J Schneir, T Mcwaid, J Alexander, B Wilfley
Advances in the manufacture of integrated circuits, x?ray optics, magnetic read-write heads, optical data storage media, and razor blades require advances in ultraprecision metrology. Each of these industries is currently investigating the use of atomic

Radiation Scattered by Two Touching Spheres

June 20, 1994
Author(s)
Egon Marx
During the manufacture of powder metal, the size distribution of the metal spheres can be determined to some extent by the distribution of light scattered by the spheres while they are streaming by a laser beam. Micrographs show the presence of chains of

A Users' Guide to NIST SRM 2084: CMM Probe Performance Standards

June 1, 1994
Author(s)
Gregory W. Caskey, Steven D. Phillips, Bruce R. Borchardt, David E. Ward, Daniel S. Sawyer
Standard Reference Materials (SRMs) as defined by the National Institute of Standards and Technology (NIST) are well-characterized materials, produced in quantity and certified for one or more physical or chemical properties. They are used to assure the

A Monte Carlo Model for SEM Linewidth Metrology

May 1, 1994
Author(s)
J R. Lowney, Michael T. Postek, Andras Vladar
A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam / specimen interaction, accurate edge location cannot be obtained. A

An Instrument for Calibrating Atomic Force Microscope Standards

May 1, 1994
Author(s)
J Schneir, T Mcwaid, Theodore V. Vorburger
To facilitate the use of AFMs for manufacturing we have initiated a project to develop and calibrate artifacts which can in turn be used to calibrate a commercial AFM so that subsequent AFM measurement are accurate and traceable back to the wavelength of

Electrical Test Structure for Overlay Metrology Referenced to Absolute Length Standards

May 1, 1994
Author(s)
Michael W. Cresswell, William B. Penzes, Robert Allen, L Linholm, C Ellenwood, E C. Teague
This test structure is based on the voltage-dividing potentiometer principle and was originally replicated in a single lithography cycle to evaluate feature placement by a primary pattern generator. A new test structure has now been developed from the

Photoreflectance Study of the Chemically Modified (100) GaAs Surface

May 1, 1994
Author(s)
John A. Dagata, O Glembocki, J Tuchman, K Ko, S Pang
Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs, the Fermi level pins
Displaying 2626 - 2650 of 2755
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