October 12, 2021
Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
… 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion mass spectrometry measurements … 1600 degrees C annealing while less damage was detected in 800 degrees C implanted samples. Electrical activations of 11% and 20% were measured for 800 degrees C As and Sb implantations annealed at 1500 …