October 12, 2021
Author(s)
Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
… stoichiometic, uniform, amorphous, and has an equivalent oxide thickness of difference} 1.3 nm and a dielectric … high-K gate diectrics, interface, tunable, zirconium oxide …