Stateful characterization of resistive switching TiO2 with electron beam induced currents

Published: December 07, 2017

Author(s)

Brian D. Hoskins, Evgheni Strelcov, Nikolai B. Zhitenev, Jabez J. McClelland, Dmitri B. Strukov, Gina C. Adam, Andrei A. Kolmakov

Abstract

Metal oxide resistive switches have become increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying fundamental properties of the devices. To this end, we demonstrate electron beam induced current (EBIC) measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices at the nanoscale. By comparing beam-energy dependent EBIC with Monte Carlo simulations of the energy absorption in different layers of the device, it is possible to deconstruct the origins of switching filament image formation and relate this directly to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in EBIC it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of an excessive current leakage region around the switching filament.
Citation: Nature Communications
Volume: 8
Issue: 1
Pub Type: Journals

Keywords

EBIC, Resistive Switching, Neuromorphic, ReRAM, NVM, Memroy: Oxide, TiO2
Created December 07, 2017, Updated November 10, 2018