Grossman, E.
, Harvey, T.
and Reintsema, C.
(2002),
Controlled Barrier Modification in Nb/NbOx/Ag Metal Insulator Metal Tunnel Diodes, Journal of Applied Physics
(Accessed December 16, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Controlled Barrier Modification in Nb/NbOx/Ag Metal Insulator Metal Tunnel Diodes
Published
Author(s)
, ,
Abstract
The nonlinear electrical transport properties of metal-insulator-metal (MIM) tunnel diodes based on a barrier of naturally grown niobium oxide have been measured at room temperature and analyzed. In most cases excellent agreement is found between the measured current-voltage characteristics and fits to the trapezoidal barrier model, over large ranges in conductance (up to several times the zero bias value), and including the asymmetry induced by the differing electrode materials, niobium and silver. Moreover, we find that an in-situ, Ar plasma etch may be used to modify the tunnel barrier in a controlled fashion. Specifically, as the etch time is increased from zero to 120 seconds, the barrier thickness is continuously reduced from 2.8 to 1.1 nm, while the barrier height at the base (Nb) electrode remains roughly constant at 300 = or -} 40 mV. Simultaneously, the barrier height at the Ag counterelectrode is lowered from an initial value of 800 mV to the asymptotic value implied by the difference in work functions of the electrode materials, namely 230 ± 40 mV.Citation
Journal of Applied Physics
Volume
91
Issue
12
Pub Type
Journals
Keywords
diode, niobium, niobium oxide, rectification, tunnel junction
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created June 14, 2002, Updated October 12, 2021