November 1, 2000
Author(s)
E Handy, M V. Rao, O W. Holland, P Chi, K A. Jones, M A. Derenge, R D. Vispute, T Venkatesan
… A Series of single energy Al, B, and Ga ion implants were performed in the energy range 50 keV - 4 … to characterize the implant depth profiles using secondary ion mass spectrometry (SIMS). From the implant depth profiles … A1N, diffusion, Ion Implantation, SiC, SIMS …