U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 351 - 375 of 3311

Product ion distributions using H3O+ proton-transfer-reaction time-of-flight mass spectrometry (PTR-ToF-MS): mechanisms, transmission effects, and instrument-to-instrument variability

February 27, 2025
Author(s)
Michael Link, Megan Claflin, Christina Cecelski, Ayomide Akande, Delany Kilgour, Paul Heine, Matthew Coggon, Chelsea Stockwell, Andrew Jensen, Jie Yu, Han Huyhn, Jenna Ditto, Carnsten Warneke, William Dresser, Keighan Gemmell, Spiro Jorga, Rileigh Robertson, Joost de Gouw, Timothy Bertram, Jonathan Abbatt, Nadine Borduas-Dedekind, Dustin Poppendieck
… mass spectrometry (PTR-MS) using hydronium ion (H3O+) ionization is widely used for the measurement of … H3O+ ionization, as well as the associated chemistry in an ion–molecule reactor, is known to generate product ion distributions (PIDs) that include other product ions …

Photoexcitation of Free Radicals and Molecular Ions Trapped in Rare-Gas Solids.

May 2, 2011
Author(s)
Marilyn E. Jacox
… The photochemical production of free radicals, molecular ions, and other highly reactive species, their trapping in … Spectrum, Free Radicals, Infrared Spectrum, Molecular Ions, Photoexcitation, Rare-Gas Matrices … Photoexcitation of Free Radicals and Molecular Ions Trapped in Rare-Gas Solids. …

Role of Ion-Beam Processing Time in the Formation and Growth of the High-Nitrogen Phase in Austenitic Stainless Steel

November 1, 2000
Author(s)
D L. Williamson, P J. Wilber, F R. Fickett, S Parascandola
… been prepared as a function of exposure time to a nitrogen ion beam Times from 15 to 4 h were selected with other … below the γ N and was found to be introduced during the Ar-ion sputter-cleaning/heating step used prior to exposure to the N-ion beam. This C-rich layer is punished ahead of the incoming …

Trapped Ions and Laser Cooling III

April 1, 1992
Author(s)
James C. Bergquist, John J. Bollinger, Wayne M. Itano, David J. Wineland
… Trapped Ions and Laser Cooling III …

High-precision measurements of n = 2 - n = 1 transition energies and level widths in He- and Be- like Argon Ions

March 26, 2018
Author(s)
Jorge Machado, Csilla Szabo-Foster, Jose Paulo Santos, Pedro Amaro, Mauro Guerra, Guojie Bian, Jean-Michel Isac, Paul Indelicato
… and of the 1s2s22p 1P1 → 1s22s2 1S0 line in Be-like argon ions. The highly-charged ions were produced in the plasma of an Electron-Cyclotron … Highly charged ions, He-like argon, Be-like argon, level widths, transition … energies and level widths in He- and Be- like Argon Ions …

Dynamic Partitioning of Neutral Polymers into a Single Ion Channel

June 1, 1999
Author(s)
S. M. Bezrukov, John J. Kasianowicz
… using single nanometer-scale pores formed by protein ion channels. The ionic conductance of a channel depends on … glycol) into two structurally and chemically different ion channels (staphylococcus aureus α-hemolysin and … alamethecin, alpha-hemolysin, diffusion, ion channel, noise analysis, partition coefficient, PEG, …

Measuring the difference in nuclear charge radius of Xe isotopes by EUV spectroscopy of highly charged Na-like ions

November 5, 2018
Author(s)
Roshani Silwal, A. Lapierre, John D. Gillaspy, Joan M. Dreiling, S A. Blundell, Dipti Goyal, A. Borovik, Jr., G Gwinner, A.C.C. Villari, Yuri Ralchenko, Endre Takacs
… extreme ultraviolet spectroscopy of highly charged Na-like ions. The isotope shift of the Na-like D1 (3s 2S1/2 − 3p … EUV spectroscopy, Na-like ions, highly charged ions, EBIT, nuclear radius Category, atomic physics, atomic … Xe isotopes by EUV spectroscopy of highly charged Na-like ions …

Calibration of a Stopping Power Model for Silicon Based on Analysis of Neutron Depth Profiling and Secondary Ion Mass Spectrometry Measurements

June 1, 2002
Author(s)
Kevin J. Coakley, Huaiyu H. Chen-Mayer, George P. Lamaze, David S. Simons, P E. Thompson
… a silicon sample with four delta-doped planes by secondary ion mass spectrometry. In a neutron depth profiling (NDP) … model calibration, neutron depth profiling, secondary ion mass spectrometry, silicon, stopping power, transport of … Based on Analysis of Neutron Depth Profiling and Secondary Ion Mass Spectrometry Measurements …

IREX III Supplement 1: Failure Analysis

April 18, 2012
Author(s)
George W. Quinn, Patrick J. Grother
… individuals more difficult. A fraction of the IREX III dataset consists of poor quality images that reduced … IREX III Supplement 1: Failure Analysis …

Selected Programs at the New SURF III Electron Storage Ring

June 1, 2000
Author(s)
Mitchell L. Furst, Uwe Arp, G P. Cauchon, A D. Hamilton, L R. Hughey, Thomas B. Lucatorto, Charles S. Tarrio
… National Institute of Standards and Technology) to SURF III (the Synchrotron Ultraviolet Radiation Facility) has … to the range available at 284 MeV operating energy of SURF III. These and other improvements have a major impact on SURF … Selected Programs at the New SURF III Electron Storage Ring …

Measuring the Ion Current in High-Density Plasmas Using Radio-Frequency Current and Voltage Measurements

September 1, 2001
Author(s)
Mark A. Sobolewski
… methods have recently been proposed for monitoring the ion current in situ. These methods rely on passive, … by comparison to direct, independent measurements of the ion current at the substrate electrode made using lower … more accurate numerical sheath model, gives values of the ion current in agreement with the independent measurements. …

Study of Direct Lithiation of Thin Si Membranes with Spatially-Correlative Low Energy Focused Li Ion Beam and Analytical Electron Microscopy Techniques

November 22, 2016
Author(s)
Vladimir P. Oleshko, Christopher L. Soles, Kevin A. Twedt, J J. McClelland
… Si is an attractive anode material for high-performance Li-ion batteries. The practical use of Si-based anodes is, … these problems. Here, we report on controlled low dose Li+ ion implantation into 9 nm-thick amorphous (a-Si) membranes … (c-Si) membranes using a low-energy focused lithium ion beam. With probe sizes of a few tens of nanometers at …

A transition-edge sensor-based x-ray spectrometer for the study of highly charged ions at the National Institute of Standards and Technology electron beam ion trap

December 16, 2019
Author(s)
Paul Szypryt, Galen C. O'Neil, Endre Takacs, Joseph N. Tan, Sean W. Buechele, Aung Naing, Douglas A. Bennett, William B. Doriese, Malcolm S. Durkin, Joseph W. Fowler, Johnathon D. Gard, Gene C. Hilton, Kelsey M. Morgan, Carl D. Reintsema, Daniel R. Schmidt, Daniel S. Swetz, Joel N. Ullom, Yuri Ralchenko
… Sensor (TES) x-ray spectrometer for the Electron Beam Ion Trap (EBIT) at the National Institute of Standards and … NIST EBIT has produced numerous studies of highly charged ions in diverse fields such as atomic physics, plasma … Institute of Standards and Technology, highly charged ions, atomic physics, plasma spectroscopy, laboratory …

High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry

February 1, 2001
Author(s)
P Chi, David S. Simons, J M. McKinley, F A. Stevie, C N. Granger
… to be accomplished with low systematic error. Secondary ion mass spectrometry (SIMS) has a demonstrated capability to … investigated include arsenic analytical species, matrix ion species, energy bandpass, and sample holder design. With … profile, energy distribution, high precision measurement, ion implantation, SIMS …

ELSEPA - Dirac Partial-Wave Calculation of Elastic Scattering of Electrons and Positrons by Atoms, Positive Ions and Molecules

January 1, 2005
Author(s)
Francesc Salvat, Aleksander Jablonski, Cedric J. Powell
… scattering of electrons and positrons by atoms, postive ions and molecules is presented. These codes perform … a local central interaction potential V (r). For atoms and ions, the static-field approximation is adopted, with the … atoms, elastic scattering, electrons, molecules, positive ions, positrons …

High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

February 5, 2018
Author(s)
Gerard E. Henein, Juraj Topolancik, Kerry NMN Siebein
… SiO2, Al2O3 and ITO have been deposited via ion beam sputtering at room temperature. The SiO2 films, 100 … Ion beam sputtering, resistivity, breakdown, SiO2, Al2O3, ITO … High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering …

Non-magnetic ion site disorder effects on the quantum magnetism of a spin-1/2 equilateral triangular lattice antiferromagnet

March 10, 2022
Author(s)
Qing Huang, R. Rawl, W. W. Xie, E. S. Chou, V. S. Zapf, X. X. Ding, C. Mauws, C. R. Wiebe, E. X. Feng, H. B. Cao, W. Tian, J. Ma, Yiming Qiu, Nicholas Butch, H. D. Zhou
… With the motivation to study how non-magnetic ion site disorder affects the quantum magnetism of … of Ba2.87Sr0.13CoSb2O9 with Sr doping on non-magnetic Ba2+ ion sites. The results show that Ba2.87Sr0.13CoSb2O9 exhibits … Ba3CoSb2O9, which demonstrates that the non-magnetic ion site disorder (the Sr doping) plays a complex role on the …

Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency

March 8, 2022
Author(s)
Garnett W. Bryant, D. Quang To, Zhengtianye Wang, Q. Dai Ho, Ruiqi Hu, Wilder Acuna, Yongchen Liu, Anderson Janotti, Joshua Zide, Stephanie Law, Matthew Doty
… a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the … the interface The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac … to the coupling between the THz excitations in the TI and III-V materials. …
Displaying 351 - 375 of 3311
Was this page helpful?