High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

Published: February 05, 2018

Author(s)

Gerard E. Henein, Juraj Topolancik, Kerry NMN Siebein

Abstract

SiO2, Al2O3 and ITO have been deposited via ion beam sputtering at room temperature. The SiO2 films, 100 nm thick, were highly insulating with a resistivity of 10 16 Ω·m and breakdown field in excess of 7x108 V/m. The Al2O3 films, 3 to 4 nm in thickness, were also found to be highly insulating with a breakdown field in excess of 3x109 V/m. The ITO films, 50 nm to 100 nm thick, were transparent and conductive as deposited, with a resistivity of 5x10-6 Ω·m. This room temperature deposition technique is proving very promising for the processing of flexible electronics devices.
Proceedings Title: MRS Advances
Volume: 3
Issue: 4
Conference Dates: November 26-December 1, 2017
Conference Location: Boston, MA
Conference Title: 2017 MRS Fall Meeting and Exhibits
Pub Type: Conferences

Keywords

Ion beam sputtering, resistivity, breakdown, SiO2, Al2O3, ITO
Created February 05, 2018, Updated November 10, 2018