Henein, G.
, Topolancik, J.
and , K.
(2018),
High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering, MRS Advances, Boston, MA, [online], https://doi.org/10.1557/adv.2018.157 (Accessed May 11, 2026)
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High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering
Published
Author(s)
, Juraj Topolancik,
Abstract
SiO2, Al2O3 and ITO have been deposited via ion beam sputtering at room temperature. The SiO2 films, 100 nm thick, were highly insulating with a resistivity of 10 16 Ω·m and breakdown field in excess of 7x108 V/m. The Al2O3 films, 3 to 4 nm in thickness, were also found to be highly insulating with a breakdown field in excess of 3x109 V/m. The ITO films, 50 nm to 100 nm thick, were transparent and conductive as deposited, with a resistivity of 5x10-6 Ω·m. This room temperature deposition technique is proving very promising for the processing of flexible electronics devices.Proceedings Title
MRS Advances
Volume
3
Issue
4
Conference Dates
November 26-December 1, 2017
Conference Location
Boston, MA
Conference Title
2017 MRS Fall Meeting and Exhibits
Pub Type
Conferences
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Keywords
Ion beam sputtering, resistivity, breakdown, SiO2, Al2O3, ITO
Citation
Issues
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Created February 5, 2018, Updated November 10, 2018