Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering



Gerard E. Henein, Juraj Topolancik, Kerry NMN Siebein


SiO2, Al2O3 and ITO have been deposited via ion beam sputtering at room temperature. The SiO2 films, 100 nm thick, were highly insulating with a resistivity of 10 16 Ω·m and breakdown field in excess of 7x108 V/m. The Al2O3 films, 3 to 4 nm in thickness, were also found to be highly insulating with a breakdown field in excess of 3x109 V/m. The ITO films, 50 nm to 100 nm thick, were transparent and conductive as deposited, with a resistivity of 5x10-6 Ω·m. This room temperature deposition technique is proving very promising for the processing of flexible electronics devices.
Proceedings Title
MRS Advances
Conference Dates
November 26-December 1, 2017
Conference Location
Boston, MA
Conference Title
2017 MRS Fall Meeting and Exhibits


Ion beam sputtering, resistivity, breakdown, SiO2, Al2O3, ITO


Henein, G. , Topolancik, J. and , K. (2018), High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering, MRS Advances, Boston, MA, [online], (Accessed May 27, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created February 5, 2018, Updated November 10, 2018