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Displaying 1 - 25 of 656

A 0.1 GHz to 1.1 THz Inverted Grounded-CPW mTRL Calibration Kit Characterization in an InP HBT Process

May 13, 2024
Jerome Cheron, Rob Jones, Dylan Williams, Miguel Urteaga, Bryan Bosworth, Nick Jungwirth, Jeffrey Jargon, Ben Jamroz, Chris Long, Nate Orloff, Ari Feldman, Peter Aaen
We report a novel design approach of on-wafer multiline thru-reflect-line (mTRL) calibration kit fabricated on a commercial semiconductor-based transistor process that we validate from 0.1 GHz to 1.1 THz. The on-wafer calibration standards are designed

POTENT:A Post-synthesis Obfuscation TEchnique for Secure Network-on-Chip ArchiTectures

May 13, 2024
Kostas Amberiadis, Dipal Halder, Sandip Ray, Yuntao Liu, Ankur Srivastava
Network-on-Chip (NoC) fabrics, the backbone of modern System-on-Chip (SoC) designs, are increasingly vulnerable to reverse engineering attacks in the globalized semiconductor supply chain. This paper presents POTENT, a novel post synthesis obfuscation

Optical frequency division & pulse synchronization using a photonic-crystal microcomb injected chip-scale mode-locked laser

February 15, 2024
Chinmay Shirpurkar, Jizhao Zang, Ricardo Bustos-Ramirez, David Carlson, Travis Briles, Lawrence R. Trask, Srinivas V. Pericherla, Di Huang, Ashish Bhardwaj, Gloria E. Hoefler, Scott Papp, Peter J. Delfyett
A mode-locked laser photonic integrated circuit with a repetition rate of 10 GHz is optically synchronized to a tantalabased photonic crystal resonator comb with a repetition rate of 200 GHz. The synchronization is achieved through regenerative harmonic

Advancing Measurement Science for Microelectronics: CHIPS R&D Metrology Program

February 13, 2024
Marla L. Dowell, Hannah Brown, Gretchen Greene, Paul D. Hale, Brian Hoskins, Sarah Hughes, Bob R. Keller, R Joseph Kline, June W. Lau, Jeff Shainline
The CHIPS and Science Act of 2022 called for NIST to "carry out a microelectronics research program to enable advances and breakthroughs....that will accelerate the underlying R&D for metrology of next-generation microelectronics and ensure the

Josephson Sampler Response using a Binary Search Algorithm

January 19, 2024
BART VAN ZEGHBROECK, Logan Howe, Pete Hopkins
This paper presents the use of a binary search algorithm to obtain the simulated response of a superconducting Josephson junction-based sampler. In the absence of noise, this simple approach is superior to mimicking the experimental approach of using an

A Fully Integrated, Automatically Generated DC-DC Converter Maintaining > 75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12-nm FinFET

January 1, 2024
Anhang Li, Jeongsup Lee, Prashansa Mukim, Brian Hoskins, Pragya Shrestha, David Wentzloff, David Blaauw, Dennis Sylvester, Mehdi Saligane
This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based layout generation in 12 nm FinFET technology. A novel design methodology is demonstrated based on

Ultra-Low Phase Noise Frequency Division with Array of Direct Digital Synthesizers

December 25, 2023
Marco Pomponio, Archita Hati, Craig Nelson
In this article, we present a four-channel direct digital synthesis (DDS) design that operates with a common clock ranging from 500 MHz to 24 GHz and generates output frequencies up to 1.75 GHz. A key feature of this board is its custom field-programmable


December 8, 2023
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz

November 15, 2023
Rob Jones, Jerome Cheron, Bryan Bosworth, Ben Jamroz, Dylan Williams, Miguel Urteaga, Ari Feldman, Peter Aaen
In this paper, we investigate the effect of two calibration errors, probe placement and capacitance per unit length, on transistor characterization from 220 GHz to 325 GHz on both a microstrip and an inverted coplanar waveguide with a via stitched ground

NIST's Antenna Gain and Polarization Calibration Service Reinstatement

October 9, 2023
Josh Gordon, Benjamin Moser
After a five-year renovation of the National Institute of Standards and Technology (NIST) Boulder, CO, antenna measurement facility, the Antenna On-Axis Gain and Polarization Measurements Service SKU63100S was reinstated with the Bureau International des

Broadband Electromagnetic Properties of Engineered Flexible Absorber Materials

August 23, 2023
Luckshitha Suriyasena Liyanage, Connor Smith, Jacob Pawlik, Sarah Evans, Angela Stelson, Chris Long, Nate Orloff, David Arnold, Jim Booth
Flexible and stretchable materials have attracted significant interest for applications in wearable electronics and bioengineering fields. Recent developments also incorporate embedded microwave circuits, components, and systems with engineered flexible

National Institute of Standards and Technology Environmental Scan 2023: Societal and Technology Landscape to Inform Science and Technology Research

August 23, 2023
Ashley Boggs-Russell, Kerrianne Buchanan, David W. Griffith, Heather Evans, Dimitrios Meritis, Lisa Ng, Anna Sberegaeva, Michelle Stephens
The 2023 National Institute of Standards and Technology Environmental Scan provides an analysis of key external factors that could impact NIST and the fulfillment of its mission in coming years. The analyses were conducted through three separate lenses

Measuring the permittivity tensor of anisotropic DyScO3 to 110 GHz

August 14, 2023
Florian Bergmann, Meagan Papac, Nick Jungwirth, Bryan Bosworth, Tomasz Karpisz, Anna Osella, Lucas Enright, Eric Marksz, Angela Stelson, Chris Long, Nate Orloff
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not

Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices

July 24, 2023
Wendy Sarney, Andreu Glassman, Justin Pearson, Christine McGinn, Peter Litwin, Ravindra Singh Bisht, Shriram Ramanathan, Stephen McDonnell, Christina Hacker, Sina Najmaei
Hafnium zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are three-terminal devices with attractive properties for embedded memory and in-memory computing architectures. We probe the HZO ferroelectric landscape dynamics with

Operando photoelectron spectromicroscopy of nanodevices: Correlating the surface chemistry and transport in SnO2 nanowire chemiresistors

June 29, 2023
Andrei Kolmakov, Trey Diulus, Kurt D. Benkstein, Stephen Semancik, Majid Kazemian, Matteo Amati, Maya Kiskinova, Luca Gregoratti
With size reduction of active elements in microelectronics to tens of nanometers and below, the effect of surface and interface properties on overall device performance becomes crucial. High resolution spectroscopic and imaging techniques provide a

Detailed analysis of the synthesis and structure of MAX phase (Mo0.75V0.25)5AlC4 and its MXene (Mo0.75V0.25)5C4

June 27, 2023
Rose Snyder, Mikkel Juelsholt, Curran Kalha, Jason Holm, Elisabeth Mansfield, Tien-Lin Lee, Pardeep Thakur, Aysha Riaz, Benjamin Moss, Anna Regoutz, Christina Birkel
MAX phases with the general formula Mn+1AXn are layered carbides, nitrides and carbonitrides with varying stacking sequence of layers of M6X octahedra and the A-element depending on n. While "211" MAX phases (n = 1) are very common, MAX phases with higher

An ultra-low noise bipolar current source

June 6, 2023
Ian Spielman, Alessandro Restelli, Mingshu Zhao, Junheng Tao, Qiyu Liang
The precise control of dc magnetic fields is crucial in wide range of experimental platforms, from ultracold quantum gases, nuclear magnetic resonance, to precision measurements. In each of these cases the Zeeman effect causes quantum states to shift in
Displaying 1 - 25 of 656