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Displaying 1 - 25 of 593

2022 Spring/Summer ARFTG Microwave Measurement Conference

April 4, 2022
Author(s)
Jon Martens, Andrej Rumiantsev, Marco De Spirito, Jeffrey Jargon
The Automatic RF Techniques Group (ARFTG) is a technical organization interested in all aspects of RF and microwave test and measurement. Originally created as a users' forum focused on the calibration and automation of early vector network analyzers

Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe2

March 23, 2022
Author(s)
Sugata Chowdhury, Albert Rigosi, Heather Hill, David B. Newell, Angela R. Hight Walker, Francesca Tavazza, Andrew Briggs
Metallic transition metal dichalcogenides like tantalum diselenide (TaSe2) exhibit exciting behaviors at low temperatures including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to classify the

Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H-SiC

February 7, 2022
Author(s)
James Ashton, Brian Manning, Stephen Moxim, Fedor Sharov, Patrick Lenahan, Jason Ryan
Electrically detected magnetic resonance (EDMR) measurements have been extended to sub-mT measurements through utilization of frequency sweeping of the oscillating magnetic field, where conventional electron paramagnetic resonance-based measurements

High-Gain 500-GHz InP HBT Power Amplifiers

January 31, 2022
Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The

Circular Economy in the High-Tech World Workshop Report

December 14, 2021
Author(s)
Martin L. Green, Kelsea Schumacher
The National Institute of Standards and Technology (NIST) held a Technical Workshop on January 27 and 28, 2021 to assess the state and challenges of a Circular Economy (CE) in the High-Tech World. Scientists, researchers, and program managers in the CE

Model for the Bipolar Amplification Effect

December 10, 2021
Author(s)
James Ashton, Stephen Moxim, Ashton Purcell, Patrick Lenahan, Jason Ryan
We present a model based on Fitzgerald-Grove surface recombination for the bipolar amplification effect (BAE) measurement, which is widely utilized in electrically detected magnetic resonance (EDMR) to measure reliability and performance-limiting interface

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

November 30, 2021
Author(s)
Tom Vincent, Jiayun liang, simrjit singh, eli castanon, xiaotian zhang, deep jariwala, olga kazakova, zakaria al-balushi, Amber McCreary
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as

Dual current anomalies and quantum transport within extended reservoir simulations

October 19, 2021
Author(s)
Gabriela Wojtowicz, Justin E. Elenewski, Marek Rams, Michael P. Zwolak
Quantum transport simulations are rapidly evolving, including the development of well–controlled tensor network techniques for many– body transport calculations. One particularly powerful approach combines matrix product states with extended reservoirs —

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Performance of Reservoir Discretizations in Quantum Transport Simulations

September 29, 2021
Author(s)
Justin E. Elenewski, Gabriela Wojtowicz, Marek Rams, Michael P. Zwolak
Quantum transport simulations require a level of discretization, often achieved through an explicit representation of the electronic reservoirs. These representations should converge to the same continuum limit, though there is a trade-off between a given

Deterministic Tagging Technology for Device Authentication

September 16, 2021
Author(s)
Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Jihong Kim
This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures inherit identical and customizable radiofrequency

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

July 29, 2021
Author(s)
Alexander Zaslavsky, Curt A. Richter, Pragya Shrestha, Brian Hoskins, Son Le, Advait Madhavan, Jabez J. McClelland
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations from standard transistor operation. Here we report on sharp current jumps and stable hysteretic

A System for Validating Resistive Neural Network Prototypes

July 27, 2021
Author(s)
Brian Hoskins, Mitchell Fream, Matthew Daniels, Jonathan Goodwill, Advait Madhavan, Jabez J. McClelland, Osama Yousuf, Gina C. Adam, Wen Ma, Muqing Liu, Rasmus Madsen, Martin Lueker-Boden
Building prototypes of heterogeneous hardware systems based on emerging electronic, magnetic, and photonic devices is an increasingly important area of research. On the face of it, the novel implementation of these systems, especially for online learning

National Institute of Standards and Technology Environmental Scan 2020

February 9, 2021
Author(s)
Heather Evans, Kristen K. Greene, William M. Healy, Elizabeth Hoffman, Kate Rimmer, Anna V. Sberegaeva, Neil M. Zimmerman
The 2020 National Institute of Standards and Technology Environmental Scan provides an analysis of key external factors that could impact NIST and the fulfillment of its mission in coming years. The analyses were conducted through four separate lenses

Dual Josephson impedance bridge: towards a universal bridge for impedance metrology

October 22, 2020
Author(s)
Frederic Overney, Nathan Flowers-Jacobs, Blaise Jeanneret, Alain Rufenacht, Anna Fox, Paul Dresselhaus, Samuel Benz
This paper presents a full characterization of a Dual Josephson Impedance Bridge (DJIB) at frequencies up to 80 kHz by using the DJIB to compare the best available impedance standards that are (a) directly traceable to the quantum Hall effect, (b) used as

A Cryogenic Quantum-Based RF Source

September 10, 2020
Author(s)
Justus A. Brevik, Alirio De Jesus Soares Boaventura, Manuel C. Castellanos Beltran, Christine A. Donnelly, Nathan E. Flowers-Jacobs, Anna E. Fox, Peter F. Hopkins, Paul D. Dresselhaus, Dylan Williams, Samuel P. Benz
We performed a preliminary calibrated measurement of the output power of a Josephson arbitrary waveform synthesizer up to 1 GHz. We present the results and measurement procedure for generating quantum-based signals using an array of Josephson junctions
Displaying 1 - 25 of 593