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Search Publications

NIST Authors in Bold

Displaying 1 - 25 of 631

National Institute of Standards and Technology Environmental Scan 2023: Societal and Technology Landscape to Inform Science and Technology Research

August 23, 2023
Author(s)
Ashley Boggs-Russell, Kerrianne Buchanan, David W. Griffith, Heather Evans, Dimitrios Meritis, Lisa Ng, Anna Sberegaeva, Michelle Stephens
The 2023 National Institute of Standards and Technology Environmental Scan provides an analysis of key external factors that could impact NIST and the fulfillment of its mission in coming years. The analyses were conducted through three separate lenses

Measuring the permittivity tensor of anisotropic DyScO3 to 110 GHz

August 14, 2023
Author(s)
Florian Bergmann, Meagan Papac, Nick Jungwirth, Bryan Bosworth, Tomasz Karpisz, Anna Osella, Lucas Enright, Eric Marksz, Angela Stelson, Chris Long, Nate Orloff
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not

Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices

July 24, 2023
Author(s)
Wendy Sarney, Andreu Glassman, Justin Pearson, Christine McGinn, Peter Litwin, Ravindra Singh Bisht, Shriram Ramanathan, Stephen McDonnell, Christina Hacker, Sina Najmaei
Hafnium zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are three-terminal devices with attractive properties for embedded memory and in-memory computing architectures. We probe the HZO ferroelectric landscape dynamics with

Operando photoelectron spectromicroscopy of nanodevices: Correlating the surface chemistry and transport in SnO2 nanowire chemiresistors

June 29, 2023
Author(s)
Andrei Kolmakov, Trey Diulus, Kurt D. Benkstein, Stephen Semancik, Majid Kazemian, Matteo Amati, Maya Kiskinova, Luca Gregoratti
With size reduction of active elements in microelectronics to tens of nanometers and below, the effect of surface and interface properties on overall device performance becomes crucial. High resolution spectroscopic and imaging techniques provide a

Detailed analysis of the synthesis and structure of MAX phase (Mo0.75V0.25)5AlC4 and its MXene (Mo0.75V0.25)5C4

June 27, 2023
Author(s)
Rose Snyder, Mikkel Juelsholt, Curran Kalha, Jason Holm, Elisabeth Mansfield, Tien-Lin Lee, Pardeep Thakur, Aysha Riaz, Benjamin Moss, Anna Regoutz, Christina Birkel
MAX phases with the general formula Mn+1AXn are layered carbides, nitrides and carbonitrides with varying stacking sequence of layers of M6X octahedra and the A-element depending on n. While "211" MAX phases (n = 1) are very common, MAX phases with higher

Comparison of saturator designs for low volatility liquid precursor delivery

April 1, 2023
Author(s)
James E. Maslar, William A. Kimes, Vladimir B. Khromchenko, Brent Sperling, Ravindra Kanjolia
Low volatility precursors are widely utilized in chemical vapor deposition and atomic layer deposition processes. Such precursors are often delivered from one of two common saturator designs: a bubbler or a flow over vessel. Previous reports concerning

On-Wafer Vector-Network-Analyzer Measurements at mK Temperatures

January 11, 2023
Author(s)
Elyse McEntee Wei, Richard Chamberlin, Nate Kilmer, Joshua Kast, Jake A. Connors, Dylan Williams
We describe a system for performing on-wafer vector-network-analyzer measurements from 100 MHz to 15 GHz at mK temperatures (i.e., less than 20 mK). We first demonstrate a camera-less probe positioning system and calibrate this system at 4.4 K. We then use

Symmetry-dependent ultrafast manipulation of nanoscale magnetic domains

December 23, 2022
Author(s)
Nanna Hagstrom, Rahul Jangid, F. N. U. Meera, Diego Turenne, Jeffrey Brock, Erik Lamb, Boyan Stoychev, Justine Schlappa, Natalia Gerasimova, Benjamin Van Kuiken, Rafael Gort, Laurent Mercadier, Loic Le Guyader, Andrey Samartsev, Andreas Scherz, Giuseppe Mercurio, Hermann Durr, Alexander Reid, Monika Arora, Hans Nembach, Justin Shaw, Emmanuelle Jal, Eric Fullerton, Mark Keller, Roopali Kukreja, Stefano Bonetti, Thomas J. Silva, Ezio Iacocca
Symmetry is a powerful concept in physics, but its applicability to far-from-equilibrium states is still being understood. Recent attention has focused on how far-from-equilibrium states lead to spontaneous symmetry breaking. Conversely, ultrafast optical

Intelligent-Fabric Computing: Challenges and Opportunities

November 8, 2022
Author(s)
Min Chen, Jia Liu, Pan Li, Hamid Gharavi, Yixue Hao, Jingyu Ouyang, Long Hu, Chong Hou, Iztok Humar, Lei Wei, Guang-Zhong Yang, Guangming Tao
With the advent of the Internet of Everything, people can easily interact with their environments immersively. The idea of pervasive computing is becoming a reality, but due to the inconvenience of carrying silicon-based entities and a lack of fine-grained

Demonstration of Superconducting Optoelectronic Single-Photon Synapses

October 6, 2022
Author(s)
Saeed Khan, Bryce Primavera, Jeff Chiles, Adam McCaughan, Sonia Buckley, Alexander Tait, Adriana Lita, John Biesecker, Anna Fox, David Olaya, Richard Mirin, Sae Woo Nam, Jeff Shainline
Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light

Towards the Physical Reliability of 3D-Integrated Systems: Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems

September 30, 2022
Author(s)
Papa Amoah, Joseph J. Kopanski, Yaw S. Obeng, Christopher Sunday, Chukwudi Okoro, Lin You, Dmirty Veksler
In this paper, we present an overview of our current research focus in developing non-destructive metrology for monitoring reliability issues in 3D-integrated electronic systems. We introduce a suite of non-destructive metrologies that can serve as early

Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

September 16, 2022
Author(s)
Elisabeth Mansfield, David Goggin, Jason Killgore, Taylor Aubry
Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for longevity and effectiveness of these devices. In this study, CVD

How to Report and Benchmark Emerging Field-Effect Transistors

July 29, 2022
Author(s)
Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

July 18, 2022
Author(s)
Jonathan Goodwill, Nitin Prasad, Brian Hoskins, Matthew Daniels, Advait Madhavan, Lei Wan, Tiffany Santos, Michael Tran, Jordan Katine, Patrick Braganca, Mark Stiles, Jabez J. McClelland
The increasing scale of neural networks and their growing application space have produced a demand for more energy and memory efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in

Gate resistance thermometry: An electrical thermal characterization technique

July 15, 2022
Author(s)
Georges Pavlidis, Brian Foley, Samuel Graham
Gate Resistance Thermometry (GRT) is a potential reliable technique to determine the average temperature of the gate metal in GaN transistors. In contrast to other electrical techniques that average the temperature across different areas of the active

The Expanding Role of National Metrology Institutes in the Quantum Era

July 12, 2022
Author(s)
Alexander Tzalenchuk, Nicolas Spethmann, Tim Prior, Jay H. Hendricks, Yijie Pan, Vladimir Bubanja, Guilherme Temporao, Dai-Hyuk Yu, Damir Ilic, Barbara L. Goldstein
Now that all base units are defined in terms of fundamental constants and can thus — at least in principle — be realized anytime and anywhere, rather than through a measurement chain leading back to unique physical artefacts, who holds the traceability

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

April 18, 2022
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit is designed in a 250 nm Indium Phosphide (InP)

2022 Spring/Summer ARFTG Microwave Measurement Conference

April 4, 2022
Author(s)
Jon Martens, Andrej Rumiantsev, Marco De Spirito, Jeffrey Jargon
The Automatic RF Techniques Group (ARFTG) is a technical organization interested in all aspects of RF and microwave test and measurement. Originally created as a users' forum focused on the calibration and automation of early vector network analyzers
Displaying 1 - 25 of 631