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Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
Published
Author(s)
James Spencer Lundh, Georges Pavlidis, Kohei Sasaki, Andrea Centrone, Joseph Spencer, Hannah Masten, Alan G Jacobs, Keita Konishi, Akito Kuramata, Karl Hobart, Travis J. Anderson, Marko Tadjer
Lundh, J.
, Pavlidis, G.
, Sasaki, K.
, Centrone, A.
, Spencer, J.
, Masten, H.
, Jacobs, A.
, Konishi, K.
, Kuramata, A.
, Hobart, K.
, Anderson, T.
and Tadjer, M.
(2024),
Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging, Applied Physics Letters, [online], https://doi.org/10.1063/5.0177609, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956370
(Accessed October 9, 2025)