NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Published

Author(s)

James Spencer Lundh, Georges Pavlidis, Kohei Sasaki, Andrea Centrone, Joseph Spencer, Hannah Masten, Alan G Jacobs, Keita Konishi, Akito Kuramata, Karl Hobart, Travis J. Anderson, Marko Tadjer
Citation
Applied Physics Letters
Volume
124
Issue
5
Pub Type
Journals

Download Paper

https://doi.org/10.1063/5.0177609
Local Download
Metrology, Materials and Electronics

Citation

Lundh, J. , Pavlidis, G. , Sasaki, K. , Centrone, A. , Spencer, J. , Masten, H. , Jacobs, A. , Konishi, K. , Kuramata, A. , Hobart, K. , Anderson, T. and Tadjer, M. (2024), Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging, Applied Physics Letters, [online], https://doi.org/10.1063/5.0177609, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956370 (Accessed October 26, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created January 31, 2024, Updated February 20, 2024
Was this page helpful?