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Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Published

Author(s)

James Spencer Lundh, Georges Pavlidis, Kohei Sasaki, Andrea Centrone, Joseph Spencer, Hannah Masten, Alan G Jacobs, Keita Konishi, Akito Kuramata, Karl Hobart, Travis J. Anderson, Marko Tadjer
Citation
Applied Physics Letters
Volume
124
Issue
5

Citation

Lundh, J. , Pavlidis, G. , Sasaki, K. , Centrone, A. , Spencer, J. , Masten, H. , Jacobs, A. , Konishi, K. , Kuramata, A. , Hobart, K. , Anderson, T. and Tadjer, M. (2024), Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging, Applied Physics Letters, [online], https://doi.org/10.1063/5.0177609, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956370 (Accessed April 23, 2024)
Created January 31, 2024, Updated February 20, 2024