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Near-Field Vibrational Spectroscopy: Infrared and Raman Studies at High Spatial Resolution

January 1, 2002

Author(s)

Stephan J. Stranick, D B. Chase, Chris A. Michaels

The ability to measure chemical bond changes on the nanometer scale is of critical importance for the characterization of catalytic materials, engineered materials and surfaces relevant to biological problems. In this paper, we will outline the development

Periodic Table: Atomic Properties of the Elements, Version 3

January 1, 2002

Author(s)

Robert A. Dragoset, Arlene Musgrove, Charles W. Clark, William C. Martin

In Situ Raman Spectroscopic Investigation of Zirconium-Niobium Alloy Corrosion Under Hydrothermal Conditions

October 1, 2001

Author(s)

James E. Maslar, Wilbur S. Hurst, Walter J. Bowers Jr., Jay H. Hendricks

In situ Raman spectroscopy was employed to investigate corrosion of a zirconium-niobium alloy in air-saturated water at a pressure of 15.5 MPa and temperatures ranging from 22 to 407 C in an optically accessible flow cell. Monoclinic ZrO 2 (m-ZrO 2) was

Summary of the American Society for Testing and Materials Practice E 2108-00 for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer

October 1, 2001

Author(s)

Cedric J. Powell

A short summary is given of the new ASTM practice E 2108-00 for the calibration of the binding-energy scales of X-ray photoelectron spectrometers.

X-ray and Neutron Optics

October 1, 2001

Author(s)

David F. Mildner

Chromium-Doped Luminescent Glasses for Raman Intensity Calibration with 785 nm Laser Excitation

September 1, 2001

Author(s)

E S. Etz, Wilbur S. Hurst, Steven J. Choquette, Douglas H. Blackburn

Influence of Elastic-Electron Scattering on Measurements of Sillicon Dioxide Film Thicknesses by X-Ray Photoelectron Spectroscopy

September 1, 2001

Author(s)

Cedric J. Powell, Aleksander Jablonski

We investigate the systematic error due to neglet of elastic scattering of photoelectrons in measurements of the thicknesses of thin films of SiO 2 on Si by x-ray photoelectron spectroscopy (XPS). Calulations were made of substrate Si 2p photoelectron

Solubilities of Cerium(IV), Terbium(III), and Iron(III) b-Diketonates in Supercritical Carbon Dioxide

September 1, 2001

Author(s)

W C. Andersen, R E. Sievers, A F. Lagalante, Thomas J. Bruno

Comparisons of Calculated and Measured Effective Attenuation Lengths for Silicon Dioxide Over a Wide Electron Energy Range

August 1, 2001

Author(s)

Cedric J. Powell, Aleksander Jablonski

We report calculations of effective attenuation lengths (EALs) for Si 2p photoelectrons in silicon dioxide at photoelectron energies between 82 and 1385 eV. These EALs are compared with measured values reported recently by Shimada et al. [Surf. Interface

Grazing Incidence X-Ray Photoemission Spectroscopy and the Accuracy of Thickness Measurements of CMOS Gate Dielectrics

August 1, 2001

Author(s)

Terrence J. Jach, E Landree

Grazing incidence x-ray photoelectron spectroscopy (GIXPS) is a method that offers promise as a non-destructive technique to measure the thickness and chemical state of ultrathin gate dielectric films. This method utilizes the non-linear dependence of the

In Situ Raman Spectroscopic Investigation of Chromium Surfaces Under Hydrothermal Conditions

August 1, 2001

Author(s)

James E. Maslar, Wilbur S. Hurst, Walter J. Bowers Jr., Jay H. Hendricks, M I. Aquino, Igor Levin

Three chromium coupons were exposed to air-saturated water at pressures of ca. 25 MPa and temperatures up to 545 C in an optically accessible flow cell. In situ Raman spectra were collected at different temperatures as the coupons were heated and then

Measurement of 8-Hydroxy-2'-Deoxyadenosine In DNA by Liquid Chromatography/Mass Spectrometry

August 1, 2001

Author(s)

Pawel Jaruga, H Rodriguez, M Miral Dizdar

8-Hydroxyadenine (8-OH-Ade) is one of the major lesions, which is formed in DNA by hydroxyl radical attack on the C-8 position of adenine followed by oxidation. We describe the measurement of the nucleoside form of this compound, 8-hydroxy-2'

Raman and FTIR Spectroscopies of Fluorescein in Solutions

August 1, 2001

Author(s)

Lili Wang, A. E. Roitberg, Curtis W. Meuse, Adolfas K. Gaigalas

Raman and FTIR transform-infra red (FT-IR) spectroscopies of fluorescein in aqueous solutions have been investigated in the pH range from 9.1 to 5.4. At pH 9.1 fluorescein is in the dianion form. At pH 5.4, fluorescein is a mixture of monoanion (

Probing nuclear quadrupole interactions in the rotationally resolved S1]S0 electronic spectrum of 2-chloronaphthalene

July 1, 2001

Author(s)

David F. Plusquellic, F -. Jahanmir

Rotationally resolved S 1 S o fluorescence excitation spectra of 2-chloronaphthalene (2CIN) are measured using a newly constructed UV laser/molecular beam spectrometer. More than 1000 well-resolved rotational lines are recorded for the two overlapping band

Correlation of the Raman spectra with the thermal conductivity of a set of diamond wafers prepared by chemical vapor deposition

June 1, 2001

Author(s)

E S. Etz, Wilbur S. Hurst, A Feldman

Molecular Order at Polymer Interfaces Measured by Broad-Bandwidth Vibrationally Resolved Sum Frequency Generation Spectroscopy

April 23, 2001

Author(s)

P T. Wilson, Kimberly A. Briggman, John C. Stephenson, William E. Wallace, Lee J. Richter

Broad-bandwidth vibrationally-resolved sum frequency generation spectroscopy has been used to measure the molecular orientation distribution at polystyrene/dielectric interfaces. A novel microcavity structure allows isolation of the free or buried

A Rare-Earth-Oxide Glass for the Wavelength Calibration of Near-Infrared Dispersive and Fourier-Transform Spectrometers

April 1, 2001

Author(s)

Steven J. Choquette, John C. Travis, L. E. O'Neal, C. J. Zhu, David L. Duewer

Effects of Elastic-Electron Scattering on Measurements of Silicon Dioxide Film Thicknesses by X-Ray Photoelectron Spectroscopy

March 1, 2001

Author(s)

Cedric J. Powell, Aleksander Jablonski

It is now customary for the effects of elastic-electron scattering to be ignored in measurements of the thicknesses of overlayer films by X-ray photoelectron spectroscopy (XPS). It is known, however, that elastic scattering can cause the effective

NIST Data Resources for Surface Analysis by X-Ray Photoelectron Spectroscopy and Auger Electron Spectroscopy

March 1, 2001

Author(s)

Cedric J. Powell, Aleksander Jablonski, A Naumkin, A Kraut-Vass, Joseph M. Conny, J R. Rumble

A description is given of data resources that are available from the National Institute of Standards and Technology (NIST) for x-ray photoelectron spectroscopy (XPS) and Auger-electron spectroscopy. NIST currently has three databases available: an XPS

Current Projects of ISO Technical Committee 201 on Surface Chemical Analysis

February 1, 2001

Author(s)

Cedric J. Powell

An overview is given of current work projects of Technical Committee 201 on Surface Chemical Analysis of the International Organization for Standardization (ISO). ISTO/TC 201 has subcommittees for Auger electron spectroscopy (AES), secondary ion mass

Nonequilibrium Theory of Scanning Tunneling Spectroscopy via Adsorbate Resonances: Nonmagnetic and Kondo Impurities

February 1, 2001

Author(s)

M Plihal, John William Gadzuk

We report on a fully nonequilibrium theory of the scanning tunneling microscopy (STM) through resonances induced by impurity atoms adsorbed on metal surfaces. The theory takes into account the effect of the tunneling current and finite bias on the system

Surface Oxidation as a Diffusion Barrier for Aluminum Deposited on Ferromagnetic Metals

February 1, 2001

Author(s)

William F. Egelhoff Jr., P. J. Chen, Robert D. McMichael, Cedric J. Powell, R Deslattes, F. G. Serpa, Romel D. Gomez

Characterization of BPSG films using Neutron Depth Profiling and Neutron/X-ray Reflectometry

January 29, 2001

Author(s)

Huaiyu H. Chen-Mayer, George P. Lamaze, Sushil K. Satija

Articles- Correlation of the Raman Spectra with the Thermal Conductivity of a Set of CVD Diamond Wefers

January 1, 2001

Author(s)

E S. Etz, A Feldman, Wilbur S. Hurst

Reported are the results of a Raman spectroscopic study of a set of chemical-vapor-deposited (CVD) diamond wafers of known thermal conductivity (k). The spectra are obtained at laser wavelengths 514.5, 785 and 1064 nm. The Raman features of these spectra

Characterization of Silicon-Oxynitride Dielectric Thin Films Using Grazing Incidence X-ray Photoelectron Spectroscopy

January 1, 2001

Author(s)

E Landree, Terrence J. Jach, D Brady, A. Karamcheti, J Canterbury, W Chism, A C. Diebold

To achieve the future goals for logic device dielectric film thickness and composition metrology, a set of well-characterized calibration reference material standards are needed for validating real-time diagnostic techniques used during production. However