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Nanotechnology

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Displaying 226 - 250 of 912

Core-Shell p-i-n GaN Nanowire LEDs by N-polar Selective Area Growth

September 11, 2018
Author(s)
Matthew D. Brubaker, Kristen L. Genter, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N- polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW

Epitaxial Graphene for High-Current QHE Resistance Standards

July 9, 2018
Author(s)
Mattias Kruskopf, Jiuning Hu, Bi Y. Wu, Yanfei Yang, Hsin Y. Lee, Albert F. Rigosi, David B. Newell, Randolph E. Elmquist
We report the growth of large-area monolayer graphene on the centimeter scale using an optimized growth process allowing for reproducibility and morphology improvements. Magneto-transport measurements on graphene quantum Hall effect devices demonstrate the

Epitaxial Graphene p-n Junctions

July 9, 2018
Author(s)
Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_

Development of combined microstructure and structure characterization facility for in situ and operando studies at the Advanced Photon Source

June 1, 2018
Author(s)
Jan Ilavsky, Fan Zhang, Ross N. Andrews, Ivan Kuzmenko, Pete R. Jemian, Lyle E. Levine, Andrew J. Allen
Following many years of evolutionary development, first at the National Synchrotron Light Source, Brookhaven National Laboratory, and then at the Advanced Photon Source (APS), Argonne National Laboratory, the APS ultra-small-angle X-ray scattering (USAXS)

Recent Developments in Surface Science and Engineering, Thin Films, Nanoscience, Biomaterials, Plasma Science, and Vacuum Technology

May 31, 2018
Author(s)
Miran Mozetic, Alenka Vesel, Gregor Primc, J. Bauer, A. Eder, G. H. S. Schmid, David Ruzic, Zeeshan Ahmed, Daniel Barker, Kevin O. Douglass, Stephen Eckel, James A. Fedchak, Jay H. Hendricks, Nikolai Klimov, Jacob Edmond Ricker, Julia Scherschligt, Jack A. Stone Jr., Gregory F. Strouse, I. Capan, M Buljan, S. Milosevic, C Teichert, S R. Cohen, A G. Silva, M Lehocky, P Humpolicek, C Rodriguez, J Hernandez-Montelongo, E Punzon-Quijorna, D Mercier, M Manso-Silvan, G Ceccone, A Galtayries, K Stana-Kleinschek, I Petrov, J E. Greene, J Avila, C Y. Chen, B Caja, H Yi, A Boury, S Lorcy, M C. Asensio, T Gans, D O?Connell, F Reniers, A Vincze, M Anderle
Nanometer-sized structures, surfaces and sub-surface phenomena have played an enormous role in science and technological applications and represent a driving-force of current interdisciplinary science. Recent developments include the atomic-scale

Alkane Encapsulation Induces Strain in Small Diameter Single-Wall Carbon Nanotubes

May 4, 2018
Author(s)
Jason K. Streit, Jochen I. Campo, Chad R. Snyder, Ming Zheng, Jeffrey R. Simpson, Angela R. Hight Walker, Jeffrey Fagan
Encapsulation of linear alkane molecules in the endohedral volumes of small diameter single- wall carbon nanotubes (SWCNTs) is shown to induce diameter dependent strain on the hexagonal lattice of carbon atoms composing the tubular structure. For the

Agglomeration of Escherichia coli with positively charged nanoparticles can lead to artifacts in a standard Caenorhabditis elegans toxicity assay

April 19, 2018
Author(s)
Shannon Hanna, Antonio Montoro Bustos, Alexander W. Peterson, Vytas Reipa, Leona D. Scanlan, Sanem Hosbas Coskun, Tae Joon Cho, Monique Johnson, Vincent A. Hackley, Bryant C. Nelson, Michael R. Winchester, John T. Elliott, Elijah Petersen
The increased use and incorporation of engineered nanoparticles (ENPs) in consumer products requires a robust assessment of their potential environmental implications. However, a lack of standardized methods for nanotoxicity testing has yielded results

AFM Scan Speed Phenomena

March 21, 2018
Author(s)
Jason P. Killgore, Christopher C. Glover, Ryan Tung
This work presents data confirming the existence of a scan speed related phenomenon in contact mode atomic force microscopy. Specifically, contact resonance spectroscopy is used to interrogate this phenomenon. A monotonic decrease in the recorded contact

Detection and Quantification of Graphene Family Nanomaterials in the Environment

March 5, 2018
Author(s)
David Goodwin, Adeyemi Adeyele, Li Piin Sung, Kay Ho, Robert Burgess, Elijah Petersen
An increase in production of commercial products containing graphene-family nanomaterials (GFNs) has led to concern over their release into the environment. The fate and potential ecotoxicological effects of GFNs in the environment are currently unclear

From Microparticles to Nanowires and Back: Radical Transformations in Plated Li Metal Morphology Revealed via in situ scanning electron microscopy

February 3, 2018
Author(s)
Alexander Yulaev, Vladimir P. Oleshko, Paul M. Haney, Jialin Liu, Yue Qi, Talin Alec, Leite Marina, Andrei A. Kolmakov
Li metal is the preferred anode material for all-solid-state Li batteries due to its high theoretical capacity and low voltage vs. standard hydrogen electrode. However, stable plating and stripping of Li metal in contact with a solid electrolyte at high

Ultralow power artificial synapses using nanotextured magnetic Josephson junctions

January 28, 2018
Author(s)
Michael L. Schneider, Christine A. Donnelly, Stephen E. Russek, Burm Baek, Matthew R. Pufall, Peter F. Hopkins, Paul D. Dresselhaus, Samuel P. Benz, William H. Rippard
Neuromorphic computing is a promising avenue to dramatically improve the efficiency of certain computational tasks, such as perception and decision making. Neuromorphic systems are currently being developed for critical applications ranging from self
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