Core-Shell p-i-n GaN Nanowire LEDs by N-polar Selective Area Growth
Matthew D. Brubaker, Kristen L. Genter, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N- polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW cores that were not subject to self-shadowing effects during the subsequent growth of a conformal low-temperature Mg:GaN shell. LED devices were fabricated from single-NW and multiple-NW arrays in their as-grown configuration by contacting the n-type core through an underlying conductive GaN layer and the p-type NW shell via a metallization layer. The NW LEDs exhibited rectifying I-V characteristics with a sharp turn-on voltage near the GaN bandgap and low reverse bias leakage current. Under forward bias, the NW LEDs produced electroluminescence with a peak emission wavelength near 380 nm and exhibited a small spectral blueshift with increasing current injection, both of which are consistent with electron recombination in the p-type shell layer through donor-acceptor- pair recombination. These core-shell NW devices demonstrate N-polar selective area growth as an effective technique for producing on-chip nanoscale light sources.
, Genter, K.
, Spann, B.
, Roshko, A.
, Blanchard, P.
, Harvey, T.
and Bertness, K.
Core-Shell p-i-n GaN Nanowire LEDs by N-polar Selective Area Growth, Proceedings of SPIE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926383
(Accessed October 3, 2023)