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Growth and Structural Characterization of Selective Area GaN Nanostructures on Si(111) Substrates

Published

Author(s)

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness

Abstract

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and the buffer. Threading dislocations and defects related to Al-Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Threading dislocations were eliminated by the “dislocation filtering” effect for the maximum hole size studied, 300 nm. Eutectic related defects in the Si surface caused voids in N-polar samples, which were not found in metal polar samples. Likewise, inversion domains were present in N-polar, but not metal polar samples.
Citation
Crystals
Volume
8

Keywords

GaN, selective area growth, lattice mismatch, inversion domains, polarity

Citation

Roshko, A. , Brubaker, M. , Blanchard, P. , Harvey, T. and Bertness, K. (2018), Growth and Structural Characterization of Selective Area GaN Nanostructures on Si(111) Substrates, Crystals, [online], https://doi.org/10.3390/cryst8090366 (Accessed April 24, 2024)
Created September 16, 2018, Updated June 1, 2020