Roshko, A.
, Brubaker, M.
, Blanchard, P.
, Harvey, T.
and Bertness, K.
(2018),
Growth and Structural Characterization of Selective Area GaN Nanostructures on Si(111) Substrates, Crystals, [online], https://doi.org/10.3390/cryst8090366
(Accessed December 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Growth and Structural Characterization of Selective Area GaN Nanostructures on Si(111) Substrates
Published
Author(s)
, , , ,
Abstract
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and the buffer. Threading dislocations and defects related to Al-Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Threading dislocations were eliminated by the dislocation filtering effect for the maximum hole size studied, 300 nm. Eutectic related defects in the Si surface caused voids in N-polar samples, which were not found in metal polar samples. Likewise, inversion domains were present in N-polar, but not metal polar samples.Citation
Crystals
Volume
8
Pub Type
Journals
Download Paper
Keywords
GaN, selective area growth, lattice mismatch, inversion domains, polarity
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created September 16, 2018, Updated June 1, 2020