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Displaying 76 - 100 of 1322

Surface Morphology Dependent Magnetic Thin Film Growth: Fe on GaN(0001)

October 12, 2021
Author(s)
P Ryan, R A. Rosenberg, D J. Keavney, J W. Freeland, Joseph Woicik
Iron deposition on ordered and disordered GaN (0001) surfaces result in dramatically different magnetic over-layer characteristics. On the ordered surface, nitrogen rapidly desorbs upon Fe deposition and a magnetically disordered film is produced

Synchrotron Based Surface Science to Probe Polymeric Interfacial Regions

October 12, 2021
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer
Synchrotron based X-ray absorption spectroscopy was utilized to probe the chemistry and structure of polymers in interfacial regions, including the interfacial regions, including the interfacial composition of filled epoxy composites, and the surface

Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications

October 12, 2021
Author(s)
Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO 2/ Si and ZrO 2/SiO 2/Si were investigated and the interfacial layer of as-deposited ZrO 2 on silicon is likely to be ZrSi xO y. The ZrO 2/ZrSi xO y/Si is

The Crystal Chemistry of L-Ta 2 O 5 and Related Structures

October 12, 2021
Author(s)
I E. Grey, W G. Mumme, Robert S. Roth
Single crystals of a new form of L-Ta2O5 with a 19 x b superstructure have been synthesised by flux growth. The phase has C-centred monoclinic symmetry with a = 6.199(1) , b = 69.55(1) (= 19 x 3.66 ), c = 3.880 (1) . The structure was refined in space

The Nanostructure Problem

October 12, 2021
Author(s)
Simon J. Billinge, Igor Levin
The powerful methods we have for solving the atomic structure of bulk crystals fail for nanostructured materials and there are currently no broadly applicable, quantitative and robust methods to replace them. The solution of this nanostructure problem is

Theory of Strain Percolation in Metals

October 12, 2021
Author(s)
R Thomson, Lyle E. Levine
We demonstrate that a deforming metal is a self organizing critical system, and that the stress-strain law can be expressed as an integration of certain derivatives of internal variables along the critical line of the system.

Towards Optimization of Patterned Superhydrophobic Surfaces

October 12, 2021
Author(s)
Bharat Bhushan, Michael Nosonovsky, Yong C. Jung
Experimental and theoretical study of wetting properties of patterned Si surfaces with cylindrical flat-top pillars of various sizes and pitch distances is presented. The values of the contact angle (CA), contact angle hysteresis (CAH) and tilt angle (TA)

Tribological Performance of Head-Disk Interface Due to Nanoasperity Impacts

October 12, 2021
Author(s)
Tze J. Chuang, Stephen M. Hsu
During the track accessing mode ofa hard disk drive, theflying height of the slider over thedisk surface becomes smaller and smaller as the demand in data storage density increases. As aresult, the propensity of glide avalanche is bound to increase when

Understanding Deviations in Lithographic Patterns Near Interfaces: Characterization of Antireflective Coatings (ARC) and the ARC/Resist Interface

October 12, 2021
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Wen-Li Wu, Douglas Guerrero, Yijun Wang, R Puligadda
Interactions between a bottom anti-reflective coating (BARC) and a photo-resist can critically impact lithographic patterns. For example, a lithographic pattern can shrink or spread near a BARC interface, a process called undercutting or footing

Viscous Flow Creep in Ceramics Containing Secondary Crystalline Phases

October 12, 2021
Author(s)
Q Jin, D S. Wilkinson, G C. Weatherly, William E. Luecke, Sheldon M. Wiederhorn
Experimental observations of the creep response of a Y 20 3-fluxed Si 3N 4 containing secondary crystalline phases(SP)are presented.The widths of grain-boundary amorphous films before and after creep have been characterized by using transmission electron

Volumetric and Size Characterization of Void Morphologies in Thermally Sprayed Metallic Deposits Using Scattering Techniques

October 12, 2021
Author(s)
T Keller, W. Wagner, J Ilavsky, Andrew J. Allen, N Margadant, S Siegmann, J Pisacka, G Barbezat, R Enzl
The complex void microstructure of thermally sprayed deposits may be approximated by three major void syste(interlamellar pores, intralamellar cracks, and volumetric globular voids), each with different volume fractions,anisotropies, sizes and shapes. This

Wear Analysis of UHMWPE Using a Load Sum Method

October 12, 2021
Author(s)
M C. Shen, Stephen M. Hsu, John A. Tesk, A Christou
An accelerated wear test pro-cedure has been developed for wear screening of ultra-high molecular weight polyethylene (UHMWPE) using a new wear tester. Results showed that the test procedure was able to discriminate known wear level samples within seven

Rapid Identification of Synthetic Routes to Functional Metastable Phases Using X-Ray Probed Laser Anneal Mapping (XPLAM) Time-Temperature Quench Maps

June 6, 2021
Author(s)
Robert T. Bell, Peter A. Beaucage, Marc J. Murphy, Aine Connolly, David Ginley, Ulrich Wiesner, R. B. Van Dover, Michael O. Thompson
Most material systems have known or predicted functional phases that are metastable at standard temperature and pressure. While substantial advances have been made in the high-throughput and combinatorial synthesis of materials with a range of

Exploring the First High Entropy Thin Film Libraries: Composition spread-controlled Crystalline Structure

March 19, 2021
Author(s)
Thi X. Nguyen, Yen-Hsun Su, Jason Hattrick-Simpers, Takahiro Nagata, Howard Joress, Kao-Shuo Chang, Suchismita Sarker, Apurva Mehta, Jyh-Ming Ting
Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)Ox, all the metals have a stable divalent oxidation state and similar cationic
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