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P Ryan, R A. Rosenberg, D J. Keavney, J W. Freeland, Joseph Woicik
Iron deposition on ordered and disordered GaN (0001) surfaces result in dramatically different magnetic over-layer characteristics. On the ordered surface, nitrogen rapidly desorbs upon Fe deposition and a magnetically disordered film is produced
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer
Synchrotron based X-ray absorption spectroscopy was utilized to probe the chemistry and structure of polymers in interfacial regions, including the interfacial regions, including the interfacial composition of filled epoxy composites, and the surface
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer
Synchrotron based X-ray absorption spectroscopy was utilized to probe the chemistry and structure of polymers in interfacial regions, including the interfacial composition of filled epoxy composites, and the surface orientation of polymer films. Polymer
Matthew Beekman, James A. Kaduk, Qingzhen Huang, Winnie Wong-Ng, Zhi Yang, Dongli Wang, George S. Nolas
During an attempt to synthesize NaGe136 (a Type-II clathrate) using a vacuum decomposition technique, a novel Na-Ge phase was obtained instead. The framework of this new phase was determined using the combined results of synchrotron, neutron, and
Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO 2/ Si and ZrO 2/SiO 2/Si were investigated and the interfacial layer of as-deposited ZrO 2 on silicon is likely to be ZrSi xO y. The ZrO 2/ZrSi xO y/Si is
Single crystals of a new form of L-Ta2O5 with a 19 x b superstructure have been synthesised by flux growth. The phase has C-centred monoclinic symmetry with a = 6.199(1) , b = 69.55(1) (= 19 x 3.66 ), c = 3.880 (1) . The structure was refined in space
M A. Sahiner, D F. Downey, S W. Novak, Joseph Woicik, D A. Arena
Characterization of the inactive clusters formed by high dose implantation silicon is one of the crucial topics in the semiconductor industry. Analytical techniques, which could provide quantitative information on the detailed description of the complexes
The powerful methods we have for solving the atomic structure of bulk crystals fail for nanostructured materials and there are currently no broadly applicable, quantitative and robust methods to replace them. The solution of this nanostructure problem is
M A. Sahiner, C W. Magee, D F. Downey, Joseph Woicik
Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and BF2
We demonstrate that a deforming metal is a self organizing critical system, and that the stress-strain law can be expressed as an integration of certain derivatives of internal variables along the critical line of the system.
Two-dimensional, microstructure-based finite element simulations were used to elucidate the influence of grain orientation configuration on the thermal-elastic response of polycrystalline ceramic materials. Two minerals found predominately in marbles
As material structures and devices build from them shrink to the nano-scale, it is ever more difficult to measure accurately mechanical properties and behavior. Such mechanical properties data are needed for designing small-scale devices and for assessing
Experimental and theoretical study of wetting properties of patterned Si surfaces with cylindrical flat-top pillars of various sizes and pitch distances is presented. The values of the contact angle (CA), contact angle hysteresis (CAH) and tilt angle (TA)
During the track accessing mode ofa hard disk drive, theflying height of the slider over thedisk surface becomes smaller and smaller as the demand in data storage density increases. As aresult, the propensity of glide avalanche is bound to increase when
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Wen-Li Wu, Douglas Guerrero, Yijun Wang, R Puligadda
Interactions between a bottom anti-reflective coating (BARC) and a photo-resist can critically impact lithographic patterns. For example, a lithographic pattern can shrink or spread near a BARC interface, a process called undercutting or footing
P H. Wooley, Z Song, L Mayton, S Nasser, U Cho, M C. Shen, Stephen M. Hsu
The etiology of aseptic loosening (AL) following total joint replacement arthroplasty remains unclear, but the generation of small wear particles from the prosthetic components is known to contribute to the pathology of AL. These particles stimulate local
Q Jin, D S. Wilkinson, G C. Weatherly, William E. Luecke, Sheldon M. Wiederhorn
Experimental observations of the creep response of a Y 20 3-fluxed Si 3N 4 containing secondary crystalline phases(SP)are presented.The widths of grain-boundary amorphous films before and after creep have been characterized by using transmission electron
T Keller, W. Wagner, J Ilavsky, Andrew J. Allen, N Margadant, S Siegmann, J Pisacka, G Barbezat, R Enzl
The complex void microstructure of thermally sprayed deposits may be approximated by three major void syste(interlamellar pores, intralamellar cracks, and volumetric globular voids), each with different volume fractions,anisotropies, sizes and shapes. This
M C. Shen, Stephen M. Hsu, John A. Tesk, A Christou
An accelerated wear test pro-cedure has been developed for wear screening of ultra-high molecular weight polyethylene (UHMWPE) using a new wear tester. Results showed that the test procedure was able to discriminate known wear level samples within seven
A Herrera-Gomez, Joseph Woicik, T Kendelewicz, K E. Miyano, W E. Spicer
The relaxation of the surface P atoms, for both the clean and Bi covered GaP (110) surface, was studied with X-Ray Standing Wave Spectroscopy (XSW) using surface sensitive x-ray photoelectron as the XSW modulated signal. The photoemission signal of the
M A. Sahiner, J. L. Sarrao, M S. Carroll, C W. Magee, S W. Novak, Joseph Woicik
The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were grown on Si substrates by using rapid thermal
Robert T. Bell, Peter A. Beaucage, Marc J. Murphy, Aine Connolly, David Ginley, Ulrich Wiesner, R. B. Van Dover, Michael O. Thompson
Most material systems have known or predicted functional phases that are metastable at standard temperature and pressure. While substantial advances have been made in the high-throughput and combinatorial synthesis of materials with a range of
Peter A. Beaucage, R. Bruce van Dover, Francis J DiSalvo, Sol M. Gruner, Ulrich Wiesner
Superconducting quantum metamaterials are expected to exhibit a variety of novel properties, but have been a major challenge to prepare as a result of the lack of appropriate synthetic routes to high-quality materials. Here, the discovery of synthesis
Thi X. Nguyen, Yen-Hsun Su, Jason Hattrick-Simpers, Takahiro Nagata, Howard Joress, Kao-Shuo Chang, Suchismita Sarker, Apurva Mehta, Jyh-Ming Ting
Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)Ox, all the metals have a stable divalent oxidation state and similar cationic