The Role of Ge In Cluster Formation in B and BF2 Implanted Si Wafers After Ge Pre-Amorphization

Published

October 12, 2021

Author(s)

M A. Sahiner, C W. Magee, D F. Downey, Joseph Woicik

Abstract

Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and BF2 implanted Si wafers in order to probe these clusters from a local structural point of view. GE K-edge x-ray absorption spectroscopy (XAFS) is a powerful tool in obtaining local structural information around the Ge atom. The effects of different implant species with various implant doses and annealing conditions on the cluster formation are presented using Ge K-edge multi-shell XAFS analysis. The non-linear least-squares fits to the Ge K-edge Fourier Transformed (FT) XAFS data using calculated standards from multiple scattering simulations around the Ge atom reveal formed Ge-B clusters for the Rapid Thermal Processing (RTP) annealed wafers. The results also indicate the laser annealing process on the other hand is blocking the formation of these Ge induced Ge-B clusters.

Proceedings Title

Proceedings of the 2003 MRS Meeting

Conference Dates

December 1-5, 2003

Conference Location

Undefined

Conference Title

Materials Research Society

Pub Type

Conferences

Keywords

B, BF2, Ge pre-amorphized, Si wafers, x-ray absorption spectroscopy (XAFS)

Citation

Sahiner, M. , Magee, C. , Downey, D. and Woicik, J. (2021), The Role of Ge In Cluster Formation in B and BF2 Implanted Si Wafers After Ge Pre-Amorphization, Proceedings of the 2003 MRS Meeting, Undefined (Accessed September 20, 2024)