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Measurements of optical scatter are often employed in production line diagnostics for surface roughness of silicon wafers. However, the geometry of the optical
Joy P. Dunkers, Kathleen M. Flynn, Mitchell Huang, Kimberly A. McDonough
In this work, a high-index silica-b ased ® ber-optic mini-bundle sensor was constructed and implemented with a Fourier transform near-infrared spectrometer in
Precision hard turning provides an alternative to grinding in some finishing applications. Rapid tool wear, however, remains an impediment to the process being
Using an ultrasonic pulse-echo method, we measured the elastic coefficients of polycrystalline indium from 300 to 5K. All elastic coefficients showed regular
R Farrow, Michael T. Postek, William J. Keery, Samuel N. Jones, J R. Lowney, M Blakey, L Fetter, J Griffith, J E. Liddle, L C. Hopkins, H A. Huggins, M Peabody, A Novembre
Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the
The calculation of uncertainty for a measurement is an effort to set reasonable bounds for the measurement result according to standardized rules. Since every
J E. Liddle, M Blakey, T Saunders, R Farrow, L Fetter, C Kneurek, R Kasica, et al, M Peabody, Shannon L. Takach, D L. Windt, Michael T. Postek
Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of
Pulsed discharge sources of supersonically cooled F radicals have been crossed with supersonically cooled H 2 to study the F( 2P3/2, 2P1/2)+H 2->HF(Ņ,J)+H
R Farrow, Michael T. Postek, William J. Keery, Samuel N. Jones, J R. Lowney, M Blakey, L Fetter, A Liddle, L C. Hopkins, H A. Huggins, M Peabody, A Novembre, J Griffith
Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the