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Journals

Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films

Author(s)
Igor Levin, Susan Trolier-McKinstry, Michael D. Biegalski, Junling Wang, Alexei A. Belik, E. Takayama-Muromachi
Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite...

Sampling Adapter for Distillation

Author(s)
Thomas J. Bruno
This is a drawing and caption of sampling adapter for distillation. ***** FOR POLICY REVIEW ONLY *****

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Author(s)
Neil M. Zimmerman, W H. Huber, Brian J. Simonds, Emmanouel S. Hourdakis, Fujiwara Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, Mark W. Keller
A common observation in metal-based (specifically, those with AlOx tunnel junctions) single- electron tunneling (SET) devices is a time-dependent instability...

Quantum Computing With Ions

Author(s)
David J. Wineland, C Monroe
This article briefly describes methods to generate entanglement and implement quantum information processing with the use of trapped ions. It is intended to...

Mean Recurrence Intervals of Failure Wind Loads

Author(s)
Dat Duthinh, Joseph A. Main, Amelia P. Wright, Emil Simiu
The Commentary to the ASCE Standard 7-05 states that the nominal mean recurrence interval (MRI) of the wind speed inducing the design strength is about 500...
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