Russek, S.
, Pappas, D.
, Halloran, S.
, Yuan, L.
, Liou, S.
and Zhang, R.
(2008),
Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature, Journal of Applied Physics
(Accessed July 2, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature
Published
Author(s)
, , , , Sy-Hwang Liou, Rui Zhang
Abstract
The minimum detectable field of magnetoresistive sensors is limited by their intrinsic noise. Magnetization fluctuations are one of the crucial noise sources and are related to the magnetization alignment at the antiferromagnetic – ferromagnetic interface. In this study, we investigated the low frequency noise of magnetic tunnel junctions (MTJs) annealed in the temperature range from 265°C to 305°C and magnetic fields up to 7 T, either in helium or hydrogen environments. Our results indicate that the magnetic fluctuators in these MTJs changed their frequency based on annealing field and temperature. The noise of the MTJs at low frequency can be reduced by annealing under high magnetic field (7 T) and further improved by annealing in a hydrogen environment.Citation
Journal of Applied Physics
Volume
103
Pub Type
Journals
Keywords
magnetic noise, magnetic sensors, magnetic tunnel junctions
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created March 7, 2008, Updated February 19, 2017