NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
Published
Author(s)
David J. Gundlach, James E. Royer, SK Park, Sankar Subramanian, Oana Jurchescu, Behrang H. Hamadani, Andrew Moad, Regis J. Kline, LC Teague, Oleg A. Kirillov, Curt A. Richter, Lee J. Richter, Sean R. Parkin, Thomas Jackson, JE Anthony
Abstract
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.
Gundlach, D.
, Royer, J.
, Park, S.
, Subramanian, S.
, Jurchescu, O.
, Hamadani, B.
, Moad, A.
, Kline, R.
, Teague, L.
, Kirillov, O.
, Richter, C.
, Richter, L.
, Parkin, S.
, Jackson, T.
and Anthony, J.
(2008),
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits, Nature Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854062
(Accessed October 1, 2025)