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Journals

Non-local propagation of correlations in long-range interacting quantum systems

Author(s)
Phil Richerme, Zhexuan Gong, Aaron Lee, Crystal Senko, Jacob Smith, Michael S. Foss-Feig, Spyridon Michalakis, Alexey Gorshkov, Christopher Monroe
The maximum speed with which information can propagate in a quantum many-body system directly affects how quickly disparate parts of the system can become

Comparing Matched Polymer:Fullerene Solar Cells Made by Solution-Sequential Processing and Traditional Blend Casting: Nanoscale Structure and Device Performance

Author(s)
Andrew Herzing, Steven A. Hawks, Jordan C. Aguirre, Laura T. Schelhas, Robert Thompson, Rachel Huber, Amy Ferreira, Guangye Zhang, Robert A. Street, Sarah Tolbert, Benjamin Schwartz
Efficient bulk heterojunction (BHJ) solar cells based on polymer:fullerene photoactive layers can be created either by traditional blend casting (BC), where the

On the limits of spin-exchange optical pumping of 3He

Author(s)
Thomas R. Gentile, T G. Walker, E Babcock, Qiang NMN Ye, Wangchun Chen
Using diode bar lasers spectrally narrowed with chirped volume holographic gratings (VHGs), we have obtained an improvement in the 3He polarization achievable

Microresonator frequency comb optical clock

Author(s)
Scott B. Papp, Katja M. Beha, Pascal P. Del'Haye, Franklyn J. Quinlan, Hansuek Lee, Kerry J. Vahala, Scott A. Diddams
Optical frequency combs enable measurement precision at the 20th digit, and measurement accuracy entirely commensurate with their reference oscillator. A new

Scanning Ion Microscopy with Low Energy Lithium Ions

Author(s)
Kevin A. Twedt, Lei Chen, Jabez J. McClelland
Using an ion source based on photoionization of laser-cooled lithium atoms, we have developed a scanning ion microscope with probe sizes of a few tens of

Influence of morphology on current-voltage behavior of GaN nanowires

Author(s)
Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford
We demonstrate the effect that the different morphologies of MBE-grown GaN nanowires (NWs) can have upon current-voltage (I-V) behavior. Two main aspects of NW
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