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Displaying 1 - 10 of 10

Detection of individual spin species via frequency-modulated charge pumping

February 2, 2022
Author(s)
James Ashton, Mark Anders, Jason Ryan
We utilize the recently developed frequency-modulated charge pumping technique to detect a single charge per cycle, which strongly suggests a single Si/SiO2 interface trap. This demonstration in sub-micron MOSFETs, in which scaling of the gate oxide yields

A technique to measure spin-dependent trapping events at the metal-oxide-semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

December 28, 2020
Author(s)
Mark A. Anders, Patrick M. Lenahan, Nicholas J. Harmon, Michael E. Flatte
We discuss a new technique to measure spin dependent trapping events at the MOSFET interface named near zero field spin dependent charge pumping (NZF SDCP) which is based on the powerful MOSFET interface trap characterization measurement called charge

Nonresonant transmission line probe for sensitive interferometric electron spin resonance detection

August 5, 2019
Author(s)
Pragya R. Shrestha, Nandita S. Abhyankar, Mark A. Anders, Kin P. Cheung, Robert M. Gougelet, Jason T. Ryan, Veronika A. Szalai, Jason P. Campbell
Electron spin resonance (ESR) spectroscopy measures paramagnetic free radicals, or electron spins, in a variety of biological, chemical, and physical systems. Detection of diverse paramagnetic species is important in applications ranging from quantum

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

January 14, 2019
Author(s)
Duane J. McCrory, Mark Anders, Jason Ryan, Pragya Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason Campbell
We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows

Effects of Nitrogen on the Interface Density of States Distribution in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors: Super-hyperfine Interactions and Near Interface Silicon Vacancy Energy Levels

November 13, 2018
Author(s)
Mark Anders, Patrick M. Lenahan, Arthur H. Edwards, Peter A. Schultz, Renee M. Van Ginhoven
The performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities

Wafer-Level Electrically Detected Magnetic Resonance:Magnetic Resonance in a Probing Station

March 20, 2018
Author(s)
Duane J. McCrory, Mark Anders, Jason Ryan, Pragya Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason Campbell
We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance