Anders, M.
, Lenahan, P.
and Ryan, J.
(2020),
Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs, Materials Science Forum, [online], https://dx.doi.org/10.1002/DOI: 10.4028/www.scientific.net/MSF.1004.573, DOI: 10.4028/www.scientific.net/MSF.1004.573
(Accessed March 13, 2025)
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Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs
Published
Author(s)
, Patrick M. Lenahan,
Citation
Materials Science Forum
Volume
1004
Pub Type
Journals
Citation
Issues
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Created June 30, 2020, Updated March 1, 2021