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Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs

Published

Author(s)

Mark A. Anders, Patrick M. Lenahan, Jason T. Ryan
Citation
Materials Science Forum
Volume
1004

Citation

Anders, M. , Lenahan, P. and Ryan, J. (2020), Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs, Materials Science Forum, [online], https://dx.doi.org/10.1002/DOI: 10.4028/www.scientific.net/MSF.1004.573, DOI: 10.4028/www.scientific.net/MSF.1004.573 (Accessed October 25, 2021)
Created June 30, 2020, Updated March 1, 2021