Anders, M.
, Lenahan, P.
and Ryan, J.
(2020),
Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs, Materials Science Forum, [online], https://dx.doi.org/10.1002/DOI: 10.4028/www.scientific.net/MSF.1004.573, DOI: 10.4028/www.scientific.net/MSF.1004.573
(Accessed March 2, 2025)