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Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal- oxide-semiconductor field-effect transistors

Published

Author(s)

James Ashton, Patrick M. Lenahan, D. J. Lichtenwalner, Aivars Lelis, Mark Anders
Citation
Journal of Applied Physics
Volume
126
Issue
14

Citation

Ashton, J. , Lenahan, P. , Lichtenwalner, D. , Lelis, A. and Anders, M. (2019), Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal- oxide-semiconductor field-effect transistors, Journal of Applied Physics, [online], https://doi.org/10.1063/1.5120704, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929100 (Accessed April 21, 2024)
Created October 9, 2019, Updated October 12, 2021