Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal- oxide-semiconductor field-effect transistors

Published

Author(s)

James Ashton, Patrick M. Lenahan, D. J. Lichtenwalner, Aivars Lelis, Mark Anders
Citation
Journal of Applied Physics
Volume
126
Issue
14

Citation

Ashton, J. , Lenahan, P. , Lichtenwalner, D. , Lelis, A. and Anders, M. (2019), Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal- oxide-semiconductor field-effect transistors, Journal of Applied Physics, [online], https://doi.org/10.1063/1.5120704, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929100 (Accessed April 19, 2024)
Created October 9, 2019, Updated October 12, 2021