Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

A technique to measure spin-dependent trapping events at the metal-oxide-semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Published

Author(s)

Mark A. Anders, Patrick M. Lenahan, Nicholas J. Harmon, Michael E. Flatte

Abstract

We discuss a new technique to measure spin dependent trapping events at the MOSFET interface named near zero field spin dependent charge pumping (NZF SDCP) which is based on the powerful MOSFET interface trap characterization measurement called charge pumping. We find that the introduction of nitrogen and resolved hyperfine interactions can have a profound impact on the NZF SDCP response which suggests that NZF SDCP may be useful to get atomic scale information about MOSFET interfaces such as defect identification. We find that the NZF SDCP amplitude appears to saturate as a function of charge pumping frequency in most cases, but not all. We make model calculations which can explain this behavior. We also find that the NZF SDCP spectrum broadens with increasing charge pumping frequency. This may be an inherent NZF SDCP phenomena and may also allow for experimental exploration of some magnetoresistance theories regarding interaction times between charge carriers and traps.
Citation
Journal of Applied Physics
Volume
128
Issue
24

Citation

Anders, M. , Lenahan, P. , Harmon, N. and Flatte, M. (2020), A technique to measure spin-dependent trapping events at the metal-oxide-semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping, Journal of Applied Physics, [online], https://dx.doi.org/10.1063/5.0027214 (Accessed October 18, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 27, 2020, Updated March 1, 2021
Was this page helpful?