U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Richard Mirin (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 351 - 375 of 433

Single photon sources based on single quantum dots

August 8, 2004
Author(s)
Richard P. Mirin
We describe temperature-dependent photon antibunching measurements from single InGaAs/GaAs quantum dots. The second order intensity correlation demonstrates single emitter emission up to 120 K and nonclassical light emission to 135 K.

Cavity ring-down spectroscopy of semiconductor quantum dots

May 16, 2004
Author(s)
Joseph J. Berry, Todd E. Harvey, Richard Mirin, A Marian, Jun Ye
We employ cavity ringdown to perform absorption experiments of InGaAs/GaAs QDs. Integrating an AlAs/GaAs DBR incorporating InGaAs QD?s into a Fabry-Perot cavity, we demonstrate this approach and its potentials for sensitive measurements on semiconductor

Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

May 16, 2004
Author(s)
Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.

Temperature-dependent, single quantum dot single photon statistics

May 16, 2004
Author(s)
Richard P. Mirin
We describe temperature-dependent photon antibunching measurements from single InGaAs/GaAs quantum dots. The second order intensity correlation demonstrates single emitter emission up to 120 K and nonclassical light emission to 135 K.

Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots

March 1, 2004
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A single-electron transistor (SET) is used to detect tunneling of single electrons into individual InGaAs self-assembled quantum dots (QDs). By using an SET with a small island area and growing QDs with a low density we are able to distinguish and measure

Single-Electron Transistor Spectroscopy of InGaAs Self-Assembled Quantum Dots

January 1, 2004
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A single-electron transistor is used to detect tunneling of single electrons into self-assembled InGaAs quantum dots. Aluminum single-electron transistors (SETs) are fabricated over an MBE-grown structure containing quantum dots (QDs) and an underlying n

Passively Mode-locked Glass Waveguide Laser with 14 fs Timing Jitter

December 1, 2003
Author(s)
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford, David J. Jones, Jun Ye
Ultra-low jitter pulse trains are produced from a passively mode-locked erbium/ytterbium co-doped planar waveguide laser using high-bandwidth feedback control acting on the physical cavity length and optical pump power. Synchronization of a 750 MHz

Compact Solid-State Waveguide Lasers

September 1, 2003
Author(s)
Berton Callicoatt, John B. Schlager, Robert K. Hickernell, Richard Mirin, Norman Sanford
DBR and mode-locked Er/Yb waveguide lasers offer single-frequency and ultralow jitter performance.