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Search Publications by: Richard Mirin (Fed)

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Displaying 376 - 400 of 433

Investigation of the Shape of InGaAs/GaAs Quantum Dots

January 1, 2003
Author(s)
Susan Y. Lehman, Alexana Roshko, Richard Mirin, John E. Bonevich
Three samples of self-assembled In 0.44Ga 0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM)) and high-resolution transmission electron microscopy (TEM) in order to characterize

Mode-Locked and Single-Frequency Er/Yb Co-Doped Waveguide Lasers

January 1, 2003
Author(s)
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford
Erbium/ytterbium co-doped planar waveguide lasers are fabricated for low-jitter mode-locked operation and single-frequency operation at 1.54 υm. The passively mode-locked lasers produce picosecond pulses at fundamental repetition rates up to 1 GHz with

Bimodal Size Distribution of Self-Assembled InGaAs Quantum Dots

September 23, 2002
Author(s)
Solveig Anders, C. S. Kim, Benjamin D. Klein, Mark W. Keller, Richard Mirin
We investigate energy level quantization in self-assembled InGaAs quantum dots that are embedded In a GaAs matrix. We use capacitance and photoluminescence spectroscopy to analyze the evolution of the energy levels with varying amounts of deposited InGaAs

Passively Mode-Locked Waveguide Laser with Low Residual Jitter

September 1, 2002
Author(s)
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford
Picosecond pulses at 1.53 υm with low residual jitter are generated from a passively mode-locked erbium/ytterbium co-doped planar waveguide laser in an extended cavity configuration. The round-trip frequency of the laser cavity is actively referenced to

Formation of InAs/GaAs quantum dots by dewetting during cooling

July 1, 2002
Author(s)
Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman
We describe a method to form InAs quantum dots on GaAs by cooling an InAs film that is deposited at high substrate temperatures. The reflection high-energy electron diffraction pattern taken after deposition of 1.9 monolayers of InAs on (100) GaAs at 540

High-Speed, High-Efficiency. Large-Area Resonant Cavity Enhanced p-i-n Photodiodes for Multimode Fiber Communications

December 1, 2001
Author(s)
M. Gvkkavas, O. Dosunmu, M. S. {Umlat}nl{umlat}, G. Ulu, Richard Mirin, David H. Christensen, E. Vzbay
In this letter, we report AlGaAs-GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60-υm diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak

Mode-Locked Erbium/Ytterbium Co-Doped Waveguide Laser

May 1, 2001
Author(s)
John B. Schlager, Berton Callicoatt, Kevin L. Silverman, Richard Mirin, Norman Sanford, D. L. Veasey
Picosecond pulses are generated from a passively mode-locked ER3+/Yb3+ co-doped planar waveguide laser in an extended cavity configuration with a semiconductor saturable absorber mode locker. Average output power exceeds 8 mW and is expected to increase

Evolution of the Shapes of InAs and InGaAs Quantum Dots

January 1, 2001
Author(s)
Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman
The exact shape of self-assembled quantum dots is still a controversial subject in the literature, despite the fact that this knowledge is of paramount importance for modeling the energy levels and electron wavefunctions in the quantum dots. We will

Multimode Lasing at Room Temperature from InGaAs/GaAs Quantum Dot Lasers

January 1, 2001
Author(s)
Benjamin D. Klein, Kevin L. Silverman, Richard Mirin
We demonstrate InGaAs/GaAs quantuum dot lasers with multimode lasing at room temperature immediately above threshold. The lasing modes are separated by about ten times the Fabry-Perot mode spacing, with several dark modes in between the lasing modes. Rate

Single-frequency and Mode-locked Er/Yb Co-doped Waveguide Lasers

January 1, 2001
Author(s)
Berton Callicoatt, John B. Schlager, Kevin L. Silverman, Robert K. Hickernell, Richard P. Mirin, Norman A. Sanford, Joseph S. Hayden, Samuel D. Conzone, Robert D. Simpson
We present results for single-frequency and mode-locked Er/Yb co-doped waveguide lasers. The single-frequency DBR waveguide lasers have output power in excess of 80 mW with laser linewidth of 17 kHz. The passively mode-locked waveguide lasers produce