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Search Publications by: Richard Mirin (Fed)

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Displaying 301 - 325 of 433

Wavelength bistability in two-section mode-locked quantum-dot diode lasers

June 1, 2007
Author(s)
Mingming M. Feng, N. A. Brilliant, Steven T. Cundiff, Richard Mirin, Kevin L. Silverman
We report a two-section mode-locked quantum dot laser with an emission wavelength that is bistable with respect to applied bias on the saturable absorber region. The two stable lasing wavelengths for this device are 1173 nm and 1166 nm with a power

Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor

May 6, 2007
Author(s)
Eric Gansen, Mary A. Rowe, Marion Greene, Danna Rosenberg, Todd E. Harvey, Mark Su, Robert Hadfield, Sae Woo Nam, Richard Mirin
We demonstrate the photon-number-resolving capabilities of a novel quantum dot, optically gated, field-effect transistor cooled to 4 K. Peaks are observed in the detector's response to highly attenuated laser pulses in accordance with Poisson statistics.

Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

December 19, 2006
Author(s)
Mary A. Rowe, Eric Gansen, Marion Greene, Danna Rosenberg, Robert Hadfield, Todd E. Harvey, Sae Woo Nam, Mark Su, Richard Mirin
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to [68±18] %

Quantum dot single photon sources studied with superconducting single photon detectors

November 1, 2006
Author(s)
Martin Stevens, Robert Hadfield, Sae Woo Nam, Richard Mirin
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation, g (2)(0), is less than 0.260 +or-} 0.024 for temperatures up to 100 K. At 120 K, g

Quantum dot single photon sources studied with superconducting single photon detectors

November 1, 2006
Author(s)
Martin J. Stevens, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Richard P. Mirin
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is less than 0.260 ± 0.024 for temperatures up to 100 K. At 120 K, g(2)(0)

Time-correlated single-photon counting with superconducting single-photon detectors

October 1, 2006
Author(s)
Martin Stevens, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Richard Mirin
We report use of a niobium nitride superconducting single-photon detector in a time-correlated single-photon counting experiment. The detector has a timing jitter of 68 +/- 3 ps full-width at half-maximum with a Gaussian temporal profile. The detector's

HEMT Amplified SET Measurements of Individual InGaAs Quantum Dots

August 25, 2006
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A High Electron Mobility Transistor (HEMT) is used with a Single Electron Transistor (SET) to measure single electrons tunnelling into individual InGaAs quantum dots. The SET detects the charge motion as an electron tunnels from an underlying n-doped layer

Enhanced light extraction from circular Bragg grating coupled microcavities

July 18, 2006
Author(s)
Mark Su, Richard Mirin
A sevenfold enhancement of light extraction over a 130 nm bandwidth from a semiconductor at room temperature was achieved using circular Bragg gratings (CBGs) etched around the periphery of a vertical-cavity light-emitting structure. The CBG defined an in