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Search Publications by: Bryan Barnes (Fed)

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Displaying 101 - 125 of 137

A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy

July 31, 2011
Author(s)
Richard M. Silver, Nien F. Zhang, Bryan M. Barnes, Jing Qin, Hui Zhou, Ronald G. Dixson
We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different

Optical illumination optimization for patterned defect inspection

April 20, 2011
Author(s)
Bryan M. Barnes, Richard Quintanilha, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints and

Nested Uncertainties and Hybrid Metrology to Improve Measurement Accuracy

April 18, 2011
Author(s)
Richard M. Silver, Nien F. Zhang, Bryan M. Barnes, Hui Zhou, Jing Qin, Ronald G. Dixson
In this paper we present a method to combine measurement techniques that reduce uncertainties and improve measurement throughput. The approach has immediate utility when performing model-based optical critical dimension measurements. When modeling optical

Characterizing a Scatterfield Optical Platform for Semiconductor Metrology

December 21, 2010
Author(s)
Bryan M. Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y. Sohn, Richard M. Silver
Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translates to a

Sub-50 nm measurements using a 193 nm angle-resolved scatterfield microscope

April 1, 2010
Author(s)
Richard Quintanilha, Martin Y. Sohn, Bryan M. Barnes, Richard M. Silver
Resist-on-silicon sub-50 nm targets have been investigated using a 193 nm angle-resolved scatter field microscope(ARSM). The illumination path of this microscope allows customization of the Conjugate Back Focal Plane (CBFP) while separate collection paths

The Limits and Extensibility of Optical Patterned Defect Inspection

April 1, 2010
Author(s)
Richard M. Silver, Bryan M. Barnes, Martin Y. Sohn, Richard Quintanilha, Hui Zhou, Chris Deeb, Mark Johnson, Milton Goodwin, Dilip Patel
New techniques recently developed at the National Institute of Standards and Technology using bright field optical tools are applied to signal-based defect analysis of features with dimensions well below the measurement wavelength. A key to this approach

Traceability: The Key to Nanomanufacturing

December 30, 2009
Author(s)
Ndubuisi George Orji, Ronald G. Dixson, Bryan Barnes, Richard M. Silver
Over the last few years key advances have been made in the area of nanomanufacturing and nanofabrication. Several researchers have produced nanostructures using either top-down or bottom-up techniques, while other groups have functionalized such structures

Photomask metrology using a 193 nm scatterfield microscope

September 30, 2009
Author(s)
Richard Quintanilha, Bryan M. Barnes, Martin Y. Sohn, Lowell P. Howard, Richard M. Silver, James E. Potzick, Michael T. Stocker
The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been usually

193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology

August 24, 2009
Author(s)
Martin Y. Sohn, Richard Quintanilha, Bryan M. Barnes, Richard M. Silver
An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and

Angle-resolved Optical Metrology using Multi-Technique Nested Uncertainties

August 15, 2009
Author(s)
Richard M. Silver, Bryan M. Barnes, Hui Zhou, Nien F. Zhang, Ronald G. Dixson
This paper introduces recent advances in scatterfield microscopy using improved normalization and fitting procedures. Reduced measurement uncertainties are obtained through the use of more accurate normalization procedures in combination with better

Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis

September 1, 2008
Author(s)
Ravikiran Attota, Michael T. Stocker, Richard M. Silver, Nathanael A. Heckert, Hui Zhou, Richard J. Kasica, Lei Chen, Ronald G. Dixson, Ndubuisi G. Orji, Bryan M. Barnes, Peter Lipscomb
In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They are

Optical Critical Dimension Measurement of Silicon Grating Targets Using Back Focal Plane Scatterfield Microscopy

January 2, 2008
Author(s)
Heather J. Patrick, Ravikiran Attota, Bryan M. Barnes, Thomas A. Germer, Michael T. Stocker, Richard M. Silver, Michael R. Bishop
We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back focal