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Search Publications by: Bryan Barnes (Fed)

Displaying 76 - 100 of 137

Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction

September 5, 2013

Author(s)

Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Francois R. Goasmat

There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimensions

Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection

June 24, 2013

Author(s)

Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo

Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity.

3-D Optical Metrology of Finite sub-20nm Dense Arrays With sub-nanometer Parametric Uncertainties

June 23, 2013

Author(s)

Jing Qin, Hui Zhou, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver

A new approach that involves parametric fitting of 3-D scattered field with electromagnetic simulation, Fourier domain normalization, and uncertainties analysis is presented to rigorously analyze 3-D through-focus optical images of targets that scatter a

Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus

April 10, 2013

Author(s)

Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Abraham Arceo

To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-sized

3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization

March 25, 2013

Author(s)

Jing Qin, Hui Zhou, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver

Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield microscopy

Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope

March 25, 2013

Author(s)

Martin Y. Sohn, Bryan M. Barnes, Richard M. Silver

With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1

SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY

March 25, 2013

Author(s)

Richard M. Silver, Bryan M. Barnes, Francois R. Goasmat, Hui Zhou, Martin Y. Sohn

The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has become

Multiple-order Imaging for Optical Critical Dimension Metrology using Microscope Characterization

October 11, 2012

Author(s)

Jing Qin, Hui Zhou, Bryan M. Barnes, Francois R. Goasmat, Ronald G. Dixson, Richard M. Silver

There has been much recent work in developing advanced optical metrology applications that use imaging optics for optical critical dimension (OCD) measurements, defect detection, and for potential use with in-die metrology applications. We have previously

Improving Optical Measurement Uncertainty with Combined Multitool Metrology Using a Bayesian Approach

August 30, 2012

Author(s)

Nien F. Zhang, Richard M. Silver, Hui Zhou, Bryan M. Barnes

Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 22 nm in critical dimension and smaller. When modeling optical measurements, a library of curves is assembled through the simulation

Phase sensitive parametric optical metrology: Exploring the limits of 3-dimensional optical metrology

April 4, 2012

Author(s)

Richard M. Silver, Jing Qin, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson, Francois R. Goasmat

There has been much recent work in developing advanced optical metrology applications that use imaging optics for critical dimension measurements, defect detection and for potential use with in-die metrology applications. Sensitivity to nanometer scale

Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light

April 4, 2012

Author(s)

Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo

Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscopy to

Fundamental Limits of Optical Patterned Defect Metrology

November 14, 2011

Author(s)

Richard M. Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin

The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become

A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy

July 31, 2011

Author(s)

Richard M. Silver, Nien F. Zhang, Bryan M. Barnes, Jing Qin, Hui Zhou, Ronald G. Dixson

We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different