January 17, 2007
      
                  
        
  Author(s)
  Neil M. Zimmerman,   Brian  Simonds,   Mikio  Fujiwara,   Yukinori  Ono,   Yasuo  Takahashi,   Hiroshi  Inokawa
 
       
            
    
    
        The problem of charge offset drift in single-electron tunneling devices, based on the Coulomb blockade, can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is