October 16, 2008
Author(s)
Cindi L. Dennis, J F. Gregg, G J. Ensell, S M. Thompson
Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction (HC) at low voltages, but switch to Fowler-Nordheim tunneling