U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Evidence for Electrical Spin Injection Into Silicon

Published

Author(s)

Cindi L. Dennis, J F. Gregg, G J. Ensell, S M. Thompson

Abstract

Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction (HC) at low voltages, but switch to Fowler-Nordheim tunneling (FNT) at high voltages. In the FNT regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the HC regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon.
Citation
Applied Physics Letters
Pub Type
Journals

Keywords

silicon, spin injection, spin tunneling

Citation

Dennis, C. , Gregg, J. , Ensell, G. and Thompson, S. (2008), Evidence for Electrical Spin Injection Into Silicon, Applied Physics Letters (Accessed May 1, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 16, 2008