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Evidence for Electrical Spin Injection Into Silicon



Cindi L. Dennis, J F. Gregg, G J. Ensell, S M. Thompson


Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction (HC) at low voltages, but switch to Fowler-Nordheim tunneling (FNT) at high voltages. In the FNT regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the HC regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon.
Applied Physics Letters


silicon, spin injection, spin tunneling


Dennis, C. , Gregg, J. , Ensell, G. and Thompson, S. (2008), Evidence for Electrical Spin Injection Into Silicon, Applied Physics Letters (Accessed June 13, 2024)


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Created October 16, 2008