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Search Publications by: Eric K. Lin (Fed)

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Displaying 251 - 275 of 392

3-Dimensional Lineshape Metrology Using Small Angle X-ray Scattering

September 1, 2003
Author(s)
Ronald L. Jones, T J. Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, G G. Barclay
The need for sub-nanometer precision metrology of dense patterns for future technology nodes challenges current methods based on light scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). We provide results of initial tests

Confinement Effects on Mositure Absorption Kinetics in Polyelectrolyte Films

September 1, 2003
Author(s)
B D. Vogt, Christopher L. Soles, Hae-Jeong Lee, Eric K. Lin, Wen-Li Wu
Quartz crystal microbalance (QCM) measurements were used to determine the absorption of water into thin poly(4-ammonium styrenesulfonic acid) films from saturated vapor at 25 C. The effect of film thickness on the absorption kinetics was investigated in

Fast Evaluation of Next-Generation Lithographical Patterns by Small Angle X-Ray Scattering

September 1, 2003
Author(s)
T Hu, Ronald L. Jones, Wen-Li Wu, Christopher L. Soles, Eric K. Lin, M Arpan, D M. Casa
As the semiconductor industry moves to next-generation lithographies, evaluation of the patterns is more stringent. We demonstrate the capability of small angel X-ray scattering in a fast evaluation of periodicity, size of the patterns, average profile of

Form of Deprotection in Chemically Amplified Resists

September 1, 2003
Author(s)
Ronald L. Jones, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The push to mass production of patterns with sub-100 nm dimensions will require nanometer level control of feature size, including line edge roughness (LER). Control of LER and sidewall roughness within the length scale of individual molecules requires a

Interdiffusion in Polystyrene and End-Functional Polystyrene Thin Films Near a Solid Surface

September 1, 2003
Author(s)
C M. Wang, Vivek Prabhu, Christopher Soles, B D. Vogt, Wen-Li Wu, Eric K. Lin, Sushil K. Satija
Polymer interdiffusion near the polymer/solid interface is studied using neutron reflectometry. Bilayers of hydrogenated polystyrene (hPS) and deuterated polystyrene (dPS) or hydrogenated dicarboxy terminated polystyrene (hPS(COOH)2) and dPS are prepared

NEXAFS Measurements of the Surface Chemistry of Chemically Amplified Photoresists

September 1, 2003
Author(s)
E Jablonski, M Angelopoulos, H Ito, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, S Sambasivan, Daniel A. Fischer, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, K Temple
Near edge x-ray absorption fine structure (NEXAFS) spectroscopy was used to quantify the surface composition profile (top 1 nm to 6 nm) of model chemically amplified photoresists with various photo-acid generators. These materials are prone to interfacial

Polyelectrolyte Effects in Model Photoresist Developer Solutions

August 1, 2003
Author(s)
Vivek M. Prabhu, Ronald L. Jones, Eric K. Lin, Wen-Li Wu
We demonstrate that the industrially relevant deprotected photoresist poly(4-hydroxy styrene) is a polyelectrolyte when dissolved in aqueous base solutions. These findings demonstrate the well-known monomer-monomer correlations indicative of

Deprotection Volume Characteristics and Line Edge Morphology in Chemically Amplified Resists

June 1, 2003
Author(s)
Ronald L. Jones, C G. Willson, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque
The focus of this paper is the form of spatial heterogeneity of deprotection at the eventual pattern edge. The form results from the packing of fuzzy blobs consisting of volumes of deprotection created by individual photogenerated acids. The form and size

Investigation of BARC-Resist Interfacial Interactions

June 1, 2003
Author(s)
C Devadoss, Yijun Wang, R Puligadda, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, E Jablonski, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Wen-Li Wu
Results are reported from studies of (A) surface versus bulk chemistry of BARC materials as a function of cure temperature, (B) the dependence of the thickness and composition of the residual layer (resist material remaining on the surface of the BARC

Sub-Nanometer Wavelength Metrology of Lithographically Prepared Structures: A Comparison of Neutron and X-Ray Scattering

June 1, 2003
Author(s)
Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, Ndubuisi George Orji, Theodore V. Vorburger, P J. Bolton, Z Barclay
The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We provide

Chemically Amplified Resist Fundamentals Studies by Combinatorial approaches

March 1, 2003
Author(s)
M Wang, Vivek Prabhu, Eric K. Lin, Michael J. Fasolka, Alamgir Karim
Sub-100 nm lithography requires more understanding of photoresist material properties and processing conditions to achieve necessary critical dimension control of patterned structures. As resist thickness and feature linewidth decrease, fundamental