Measurement of Pore Size and Matrix Characteristics in Low-Κ Dielectrics by Neutron Contrast Variation

Published

September 1, 2003

Author(s)

R C. Hedden, V. J. Lee, Barry J. Bauer, Christopher L. Soles, Wen-Li Wu, Eric K. Lin

Abstract

The principle of small-angle neutron scattering (SANS) contrast variation is applied to characterization of nanoporous low-k thin films. Using a vapor adsorption technique, SANS measurements are used to identify a contrast match solvent mixture consisting of the hydrogen- and deuterium- containing analogs of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. In combination with information from X-ray reflectivity and ion scattering, the technique is useful for estimating the density of the matrix (wall) material and the pore size distribution. To illustrate the technique, a porous methylsilsesquioxane (MSQ) spin-on dielectric is characterized.

Proceedings Title

Characterization and Metrology for ULSI Technology, Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP

Volume

683

Conference Dates

March 24-28, 2003

Conference Location

Austin, TX

Conference Title

AIP Conference Proceedings

Pub Type

Conferences

Download Paper

Local Download

Keywords

dielectric, low-k, nanoporous thin films, neutron scattering, porosimetry, x-ray reflectivity

Citation

Hedden, R. , Lee, V. , Bauer, B. , Soles, C. , Wu, W. and Lin, E. (2003), Measurement of Pore Size and Matrix Characteristics in Low-Κ Dielectrics by Neutron Contrast Variation, Characterization and Metrology for ULSI Technology, Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP, Austin, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852162 (Accessed March 16, 2025)