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Search Publications by

Curt A. Richter (Fed)

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Displaying 1 - 25 of 231

How to Report and Benchmark Emerging Field-Effect Transistors

July 29, 2022
Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of

High-performance dual-gate graphene pH sensors

June 28, 2022
Son Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind Balijepalli
High precision biophysical measurements that are portable and performed without prior labeling of the molecules can greatly benefit several areas of biotechnology and biophysics, but existing techniques often lack sufficient resolution. Field-effect

Geometric interference in a high-mobility graphene annulus p-n junction device

January 10, 2022
Son Le, Albert Rigosi, Joseph Hagmann, Christopher Gutierrez, Ji Ung Lee, Curt A. Richter
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

July 29, 2021
Alexander Zaslavsky, Curt A. Richter, Pragya Shrestha, Brian Hoskins, Son Le, Advait Madhavan, Jabez J. McClelland
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations from standard transistor operation. Here we report on sharp current jumps and stable hysteretic

Substrate-mediated hyperbolic phonon polaritons in MoO3

February 15, 2021
Jeffrey Schwartz, Son T. Le, Sergiy Krylyuk, Curt A. Richter, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs) are hybrid excitations of light and coherent charge oscillations that exist in strongly optically anisotropic, two-dimensional materials (e.g., MoO3). These polaritons propagate through the material's volume with long

High-Resolution Biochemical Activity Measurements with Commercial Transistors

September 1, 2020
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement

Electron-electron interactions in low-dimensional Si:P delta layers

June 15, 2020
Joseph Hagmann, Xiqiao Wang, Ranjit Kashid, Pradeep Namboodiri, Jonathan Wyrick, Scott W. Schmucker, Michael Stewart, Richard M. Silver, Curt A. Richter
Key to producing quantum computing devices based on the atomistic placement of dopants in silicon by scanning tunneling microscope (STM) lithography is the formation of embedded highly doped Si:P delta layers (δ-layers). This study investigates the

Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors

April 14, 2020
Son T. Le, Michelle A. Morris, Antonio Cardone, Nicholas B. Guros, Jeffery B. Klauda, Brent A. Sperling, Curt A. Richter, Harish C. Pant, Arvind Balijepalli
We show that commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed-loop control achieve a resolution of (7.2+/-0.3)x10-3 pH units with a bandwidth of 10 Hz. The results represent an 3-fold improvement in performance

Use of quantum effects as potential qualifying metrics for "quantum grade silicon"

December 30, 2019
Aruna N. Ramanayaka, Ke Tang, Joseph A. Hagmann, Hyun S. Kim, David S. Simons, Curt A. Richter, Joshua M. Pomeroy
Across solid state quantum information, material deficiencies limit performance through enhanced relaxation, charge defect motion, or isotopic spin noise. While classical measurements of device performance provide cursory guidance, specific qualifying

Nonvolatile memory based on redox-active Ruthenium molecular monolayers

October 14, 2019
Kai Jiang, Sujitra Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li
A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click' reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x


September 27, 2019
Arvind K. Balijepalli, Son T. Le, Harish C. Pant, Curt A. Richter
We have developed biosensors based on dual-gated field-effect transistors (FETs) that operate at the quantum capacitance limit. The FETs are fabricated with atomically thin MoS2 semiconducting films and top-gated with a room temperature ionic-liquid. The

Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements

August 7, 2019
Son T. Le, Nicholas B. Guros, Robert C. Bruce, Antonio Cardone, Niranjana D. Amin, Siyuan Zhang, Jeffery B. Klauda, Harish C. Pant, Curt A. Richter, Arvind Balijepalli
We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with 75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature when used as a

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

April 16, 2019
Nicholas B. Guros, Son T. Le, Siyuan Zhang, Brent A. Sperling, Jeffery B. Klauda, Curt A. Richter, Arvind Balijepalli
We have developed an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area 2D MoS2 films with an average yield of 85 %. A central element of the technique is a new exposed film forming gas anneal (EF- FGA) that

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

January 4, 2019
Hyuk-Jae Jang, Emily Bittle, Qin Zhang, Adam Biacchi, Curt A. Richter, David J. Gundlach
Here, we present the electrical detection of singlet fission in tetracene by using a field- effect transistor (FET). Singlet fission is a photo-induced spin-dependent process yielding two triplet excitons from the absorption of a single photon. , In this

Magnetotransport in highly enriched 28Si for quantum information processing devices

November 25, 2018
Aruna N. Ramanayaka, Ke Tang, Joseph Hagmann, Hyun S. Kim, Curt A. Richter, Joshua M. Pomeroy
Elimination of unpaired nuclear spins can result in low error rates for quantum computation; therefore, isotopically enriched 28Si is regarded as an ideal environment for quantum information processing devices. Using mass selected ion beam deposition

Contact and Non-Contact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

September 24, 2018
Adam J. Biacchi, Son T. Le, Brian G. Alberding, Joseph A. Hagmann, Sujitra J. Pookpanratana, Edwin J. Heilweil, Curt A. Richter, Angela R. Hight Walker
Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made towards the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it

Controllable Wide-range n- and p-Doping of Monolayer Group 6 Transition-metal Disulfides and Diselenides

July 30, 2018
Siyuan Zhang, Heather M. Hill, Curt A. Richter, Angela R. Hight Walker, Barlow Stephen, Seth Marder, Christina A. Hacker, Sujitra J. Pookpanratana
Developing processes to controllably dope transition-metal dichalcogenides (TMDs) is critical to achieving commercial integration for optical and electrical applications. In this study, molecular reductants and oxidants are introduced onto a series of

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of