Geometric interference in a high-mobility graphene annulus p-n junction device

Published

January 10, 2022

Author(s)

Son Le, Albert Rigosi, Joseph Hagmann, Christopher Gutiérrez, Ji Ung Lee, Curt A. Richter

Abstract

The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring.

Citation

Physical Review B

Volume

105

Issue

4

Pub Type

Journals

Download Paper

https://doi.org/10.1103/PhysRevB.105.045407

Local Download

Keywords

quantum transport, graphene, quantum interference, nanoelectronics, nanoscale device characterization

Citation

Le, S. , Rigosi, A. , Hagmann, J. , Gutierrez, C. , Lee, J. and Richter, C. (2022), Geometric interference in a high-mobility graphene annulus p-n junction device, Physical Review B, [online], https://doi.org/10.1103/PhysRevB.105.045407, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=933259 (Accessed October 14, 2025)