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Search Publications by: Andras E. Vladar (Fed)

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Displaying 226 - 250 of 374

Exploring and Extending the Limits of CD-SEMs' Resolution

November 1, 2003
Author(s)
Andras Vladar, Michael T. Postek, John S. Villarrubia
This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, the in

CD-SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography

July 1, 2003
Author(s)
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)

CD-SEM Measurement of Line-Edge Roughness Test Patterns for 193-nm Lithography

July 1, 2003
Author(s)
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)

A Simulation Study of Repeatability and Bias in the CD-SEM

May 1, 2003
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines is determined by measurement repeatability and any sample-dependent biases. In order to ascertain the dependence of these quantities

Exploring and Extending the Limits of CD-SEMs' Resolution

March 1, 2003
Author(s)
Andras Vladar, Michael T. Postek, John S. Villarrubia
This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, the in

Photomask Dimensional Metrology in the SEM Part I: Has Anything Really Changed?

January 1, 2003
Author(s)
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and
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