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Search Publications by: Andras E. Vladar (Fed)

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Displaying 251 - 275 of 374

Photomask Dimensional Metrology in the SEM: Has Anything Really Changed?

December 1, 2002
Author(s)
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and

Scanning Electron Microscope Analog of Scatterometry

July 1, 2002
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
Optical scatterometry has attracted a great deal of interest for linewidth measurement due to its high repeatability and capability of measuring sidewall shape. We have developed an analogous and complementary technique for the scanning electron microscope

Two-dimensional Simulation Modeling in Imaging and Metrology Research

July 1, 2002
Author(s)
Michael T. Postek, Andras Vladar, J R. Lowney, William J. Keery
Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multiple

Silicon Nanostructures Fabricated by Scanning Probe Lithography and TMAH Etching

January 1, 2002
Author(s)
F S. Chien, W F. Hsieh, S Gwo, Andras Vladar, John A. Dagata
Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and reliable

Critical Dimension Metrology and the Scanning Electron Microscope

December 1, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning electron

Trial Shape-Sensitive Linewidth Measurement System

November 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in
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