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Search Publications by: Andras E. Vladar (Fed)

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Displaying 201 - 225 of 374

Test of CD-SEM Shape-Sensitive Linewidth Measurement

July 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
In a model-based library (MBL) approach to scanning electron microscope (SEM) linewidth measurement, a library of simulation results for a range of lineshapes is searched for a match to the measured image of the unknown line. Compared to standard

Laser Sample Stage-Based Image Resolution Enhancement Method for SEMs

May 24, 2004
Author(s)
Andras Vladar, Crossley E. Jayewardene, Bradley N. Damazo, William J. Keery, Michael T. Postek
The development of a very fast, very accurate laser stage measurement system facilitates a new method to enhance the image and line scan resolution of scanning electron microscopes (SEMs). This method, allows for fast signal intensity and displacement

Determination of Optimal Parameters for CD-SEM Measurement of Line Edge Roughness

May 1, 2004
Author(s)
B Bunday, M R. Bishop, D Mccormack, John S. Villarrubia, Andras Vladar, Theodore V. Vorburger, Ndubuisi George Orji, J Allgair
The measurement of line-edge roughness (LER) has recently become a topic of concern in the litho-metrology community and the semiconductor industry as a whole. The Advanced Metrology Advisory Group (AMAG), a council composed of the chief metrologists from

Dimensional Metrology of Resist Lines Using a SEM Model-Based Library Approach

May 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, B Bunday, M R. Bishop
The widths of 284 lines in a 193 nm resist were measured by two methods and the results compared. One method was scanning electron microscopy (SEM) of cross-sections. The other was a model-based library (MBL) approach in which top-down CD-SEM line scans of

Shape-Sensitive Linewidth Measurements of Resist Structures

January 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
Widths of developed 193 nm resist lines were measured by two methods and compared. One method was a new model-based library method. In this method the scanning electron microscope (SEM) images corresponding to various edge shapes are simulated in advance

Exploring and Extending the Limits of CD-SEMs' Resolution

November 1, 2003
Author(s)
Andras Vladar, Michael T. Postek, John S. Villarrubia
This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, the in
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