Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Andras E. Vladar (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 351 - 374 of 374

SEM Performance Evaluation Using the Sharpness Criterion

May 1, 1996
Author(s)
Michael T. Postek, Andras Vladar
Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or

Models for Relating Scanning Electron Microscopy Images to Measured Artifacts

April 1, 1996
Author(s)
Michael T. Postek, Andras Vladar, J R. Lowney
A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results were

Digital Imaging for Scanning Electron Microscopy

January 1, 1996
Author(s)
Michael T. Postek, Andras Vladar
The development and application of digital imaging technology has been one of the major advancements in scanning electron microscopy (SEM) during the past several years. This digital revolution has been brought about by significant progress in

SEM Image Sharpness Analysis

January 1, 1996
Author(s)
Michael T. Postek, Andras Vladar
The technique described here, utilizing the sharpness concept, is facilitated by the use of the FFT techniques to analyze the electron micrograph to obtain the evaluation. This is not the first application of Fourier techniques to SEM images, but it is the

A Monte Carlo Model for SEM Linewidth Metrology

May 1, 1994
Author(s)
J R. Lowney, Michael T. Postek, Andras Vladar
A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam / specimen interaction, accurate edge location cannot be obtained. A
Was this page helpful?