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Electron Beam Interaction Modeling as Applied to X-Ray Lithography Mask SEM Linewidth Metrology

Published

Author(s)

Michael T. Postek, J R. Lowney, Andras Vladar, William J. Keery, Egon Marx, Robert D. Larrabee

Abstract

This work provides an approach to improved x?ray mask linewidth metrology and a more precise edge location algorithm for measurement of feature sizes on x?ray masks in commercial instrumentation. The transmitted electron detection mode is also useful in both mask inspection and mask repair, because the high contrast of the image allows for rapid determination of mask defects and high-density contamination particle detection because the transmitted electrons simulate transmitted x?rays. This work represents the first time that electron beam modeling has been used to determine the accurate edge location in an SEM image. This also represents an initial step toward the first SEM-based accurate linewidth measurement standard from NIST, as well as providing a viable methodology for line width measurement instruments of x?ray masks for the x?ray lithography community.
Citation
Scanning
Volume
16, Supp. IV

Citation

Postek, M. , Lowney, J. , Vladar, A. , Keery, W. , Marx, E. and Larrabee, R. (1994), Electron Beam Interaction Modeling as Applied to X-Ray Lithography Mask SEM Linewidth Metrology, Scanning (Accessed July 20, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1993, Updated October 12, 2021