Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Models for Relating Scanning Electron Microscopy Images to Measured Artifacts

Published

Author(s)

Michael T. Postek, Andras Vladar, J R. Lowney

Abstract

A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results were obtained for the simulated backscattered and secondary electron yields, respectively, from a 1 um step in a silicon substrate at 1 keV beam energy. Finer detail has been extracted from the original signal by this method, and allows for more information to be obtained about the target geometry.
Citation
Proceedings of Scanning 96
Volume
18(3)

Citation

Postek, M. , Vladar, A. and Lowney, J. (1996), Models for Relating Scanning Electron Microscopy Images to Measured Artifacts, Proceedings of Scanning 96 (Accessed June 21, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created March 31, 1996, Updated October 12, 2021