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Search Publications by: Joseph A Stroscio (Fed)

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Displaying 76 - 100 of 176

Real Space Mapping of Magnetically Quantized Graphene States

August 8, 2010
Author(s)
Joseph A. Stroscio, D. L. Miller, Kevin Kubista, Gregory M. Rutter, Ming Ruan, Walt A. de Heer, Markus Kindermann, Phillip N. First
In a perpendicular magnetic field, the quantized independent-electron states (Landau levels) of graphene are degenerate in the valley degree of freedom and nearly-so in spin. The momentum-space valley degeneracy traces to the equivalence of the A and B

Edge structure of epitaxial graphene islands

June 7, 2010
Author(s)
Gregory M. Rutter, N Guisinger, Jason Crain, Phillip N. First, Joseph A. Stroscio
Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, {approzimately equal}10 nm single-layer graphene islands are observed on top of the SiC buffer layer and

Epitaxial Graphenes on Silicon Carbide

April 1, 2010
Author(s)
Joseph A. Stroscio, Walt A. de Heer, Phillip First, Claire Berger, Thomas Seyller, Jeong-Sun Moon
The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC is much different than growth on the C-terminated SiC surface, and discuss the

Structural analysis of multilayer graphene via atomic moire interferometry

March 24, 2010
Author(s)
David L. Miller, Kevin Kubista, Gregory M. Rutter, Ming Ruan, Walt A. de Heer, Phillip First, Joseph A. Stroscio
The rotation of stacked honeycomb lattices produces an observable moir e pattern in the topography of scanning tunneling microscopy images, which have long been observed in highly-oriented pyrolytic graphite due to rotation of the surface layer relative to

Making Mn Substitutional Impurities in InAs using a Scanning Tunneling Microscope

September 29, 2009
Author(s)
Young J. Song, Steven C. Erwin, Gregory M. Rutter, Phillip N. First, Nikolai Zhitenev, Joseph A. Stroscio
We describe in detail a new atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mnad) are exchanged one-by-one with surface In atoms (Insu) to create a Mn surface-substitutional (MnIn) and an

Observing the Quantization of Zero Mass Carriers in Graphene

May 15, 2009
Author(s)
Joseph A. Stroscio, Gregory M. Rutter, D. L. Miller, K. Kubista, W. A. de Heer, Phillip N. First
Application of a magnetic field to conductors causes the charge carriers to circulate in cyclotron orbits with quantized energies called Landau levels (LLs). These are equally spaced in normal metals and two-dimensional electron gases. In graphene, however

Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen

March 20, 2009
Author(s)
N Guisinger, Gregory M. Rutter, Jason Crain, Phillip N. First, Joseph A. Stroscio
The realization of graphene-based electronics involves numerous challenges that include large-scale device fabrication and the ability to control the electronic properties of the graphene material1. As a nearly ideal 2D conductor, the electronic properties

Structural and Electronic Properties of Bilayer Epitaxial Graphene

July 1, 2008
Author(s)
Gregory M. Rutter, Jason Crain, N Guisinger, Phillip N. First, Joseph A. Stroscio
Scanning tunneling microscopy (STM) and spectroscopy (STS) is used to study the structural and electronic properties of bilayer epitaxial graphene on SiC(0001). Topographic images reveal that graphene conforms to the SiC interface roughness and is observed

The Atomic-Scale Investigation of Graphene Formation on 6H-SiC(0001)

July 1, 2008
Author(s)
N Guisinger, Gregory M. Rutter, Jason Crain, Christian Heiliger, P First, Joseph A. Stroscio
The growth of graphene on the silicon terminated face of 6H-SiC(0001) was investigated by scanning tunneling microscopy (STM) measurements. The initial stages of ultra high vacuum (UHV) graphitization resulted in the growth of individual graphene sheets on

Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

December 14, 2007
Author(s)
Gregory M. Rutter, N Guisinger, Jason Crain, Emily Jarvis, Mark D. Stiles, T Li, P First, Joseph A. Stroscio
The potential for electronics based on graphene, a single layer of sp2-bonded carbon atoms, rests on the ability to fabricate graphene into useful devices. Graphene grown epitaxially on SiC substrates offers an avenue for carbon-based electronics allowing

Scattering and Interference in Epitaxial Graphene

July 13, 2007
Author(s)
Gregory M. Rutter, Jason Crain, T Li, P First, Joseph A. Stroscio
A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is

Electronically Induced Atom Motion in Engineered CoCu Nanostructures

August 18, 2006
Author(s)
Joseph A. Stroscio, Francesca M. Tavazza, Jason Crain, Robert Celotta, Anne M. Chaka
We have measured the quantum yield for exciting the motion of a single Co atom in CoCu n linear molecules constructed on a Cu(111) surface. The Co atom switched between two lattice positions during electron excitation from the tip of a scanning tunneling

Electronic Effects in Length Distribution of Atom Chains

April 17, 2006
Author(s)
Jason Crain, Mark D. Stiles, Joseph A. Stroscio, Daniel T. Pierce
Gold deposited on Si(553) leads to self assembly of atomic chains, which are broken into finite segments by atomic defects. Scanning tunneling microscopy is used to investigate the distribution of chain lengths and the correlation between defects