First, P.
, Dragoset, R.
, Stroscio, J.
, Celotta, R.
and Feenstra, R.
(1989),
Structure of Cs on GaAs(110) as Determined by STM, Journal of Vacuum Science and Technology A
(Accessed October 5, 2024)
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Structure of Cs on GaAs(110) as Determined by STM
Published
Author(s)
P First, , , , R Feenstra
Abstract
Submonolayer coverages of Cs adsorbed at room temperature on the GaAs(110) surface are examined with scanning tunneling microscopy. Linear chains, formed by two adjoining rows of Cs atoms, are observed along the [10] direction for coverages as low as 0.03 monolayer. The one-dimensional Cs chains are observed to be several hundred Aring} long, and are seen in images of both the occupied and unoccupied electronic states. At higher coverages, approaching 0.15 monolayer, stable linear structures consisting of three neighboring Cs rows have been found.Citation
Journal of Vacuum Science and Technology A
Volume
A7
Issue
4
Pub Type
Journals
Citation
Issues
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Created December 31, 1988, Updated October 12, 2021