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Insulating Cs Overlayer on InSb(110)

Published

Author(s)

L Whitman, Joseph Stroscio, Robert A. Dragoset, Robert Celotta

Abstract

Cesium overlayers on room-temperature InSb(110) have been studied with scanning tunneling microscopy and spectroscopy. A two-dimensional (2D) overlayer is observed, consisting of four-atom, Cs(110)-like planar clusters arranged in a c(2 x 6) superlattice. Interestingly, current-versus-voltage (I-V) spectra exhibit a band gap of asymp} 0.6 eV, larger than the substrate band gap of asymp} 0.15 eV. The I-V spectra are very similar to those observed on the similar 2D overlayer on GaAs (110), suggesting that the measured gap is a property of the 2D Cs film. The possible origins of this insulating behavior are discussed.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
44
Issue
11

Citation

Whitman, L. , Stroscio, J. , Dragoset, R. and Celotta, R. (1991), Insulating Cs Overlayer on InSb(110), Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620388 (Accessed April 28, 2026)
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Created January 1, 1991, Updated April 21, 2026
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