Whitman, L.
, Stroscio, J.
, Dragoset, R.
and Celotta, R.
(1991),
Insulating Cs Overlayer on InSb(110), Physical Review B (Condensed Matter and Materials Physics)
(Accessed December 11, 2023)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Insulating Cs Overlayer on InSb(110)
Published
Author(s)
L Whitman, , ,
Abstract
Cesium overlayers on room-temperature InSb(110) have been studied with scanning tunneling microscopy and spectroscopy. A two-dimensional (2D) overlayer is observed, consisting of four-atom, Cs(110)-like planar clusters arranged in a c(2 x 6) superlattice. Interestingly, current-versus-voltage (I-V) spectra exhibit a band gap of asymp} 0.6 eV, larger than the substrate band gap of asymp} 0.15 eV. The I-V spectra are very similar to those observed on the similar 2D overlayer on GaAs (110), suggesting that the measured gap is a property of the 2D Cs film. The possible origins of this insulating behavior are discussed.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
44
Issue
11
Pub Type
Journals
Citation
Created December 31, 1990, Updated October 12, 2021