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A Scanning Tunneling Microscopy Study of Clean and Cs-Covered InSb(110)

Published

Author(s)

L Whitman, Joseph A. Stroscio, Robert A. Dragoset, Robert Celotta

Abstract

AB Scanning tunneling microscopy has been employed to study clean and Cs-covered InSb(110) surfaces. Atomic-resolution images of both the filled and empty electronic state densities have been obtained. The surface relaxation determined from these images is in good agreement with that predicted by structure calculations. A variety of surface defects have been observed, with the most common appearing to be simple Sb vacancies. Adjacent In and Sb vacancies (Schottky defects) have also been observed. The perturbation of the surface surrounding these defects is asymmetrical along [001], as might be expected due to the asymmetry in the surface. Surprisingly, the perturbation is also asymmetrical along [11BAR0], where symmetry is expected. Cs adsorbed on room-temperature InSb(110) forms one-dimensional zig-zag chains along [11BAR0], similar to those previously observed on GaAs(110).
Citation
Journal of Vacuum Science and Technology B
Volume
9
Issue
2

Citation

Whitman, L. , Stroscio, J. , Dragoset, R. and Celotta, R. (1991), A Scanning Tunneling Microscopy Study of Clean and Cs-Covered InSb(110), Journal of Vacuum Science and Technology B (Accessed February 22, 2024)
Created December 31, 1990, Updated October 12, 2021